Electric subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers

T. W. Kim, J. I. Lee, K. N. Kang, K. S. Lee, Kyung-hwa Yoo

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Shubnikovde Haas and Van der Pauw Hall-effect measurements on In0.52Al0.48As/In0.65Ga0.35As/ In0.53Ga0.47As/In0.52Al0.48As quantum wells grown by molecular-beam epitaxy have been carried out to investigate the electrical properties of an electron gas and to determine the subband energies and wave functions in a potential well. Shubnikovde Haas measurements have demonstrated the existence of a quasi-two-dimensional electron gas in the In0.65Ga0.35As potential well between the In0.52Al0.48As and In0.53Ga0.47As barriers. With use of these experimental results and a self-consistent numerical method, the electric subband energies and energy eigenfunctions were determined.

Original languageEnglish
Pages (from-to)12891-12893
Number of pages3
JournalPhysical Review B
Volume44
Issue number23
DOIs
Publication statusPublished - 1991 Jan 1

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Semiconductor quantum wells
quantum wells
Electron gas
Two dimensional electron gas
electron gas
Hall effect
Wave functions
Molecular beam epitaxy
Eigenvalues and eigenfunctions
Numerical methods
Electric properties
energy
eigenvectors
molecular beam epitaxy
electrical properties
wave functions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, T. W. ; Lee, J. I. ; Kang, K. N. ; Lee, K. S. ; Yoo, Kyung-hwa. / Electric subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers. In: Physical Review B. 1991 ; Vol. 44, No. 23. pp. 12891-12893.
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abstract = "Shubnikovde Haas and Van der Pauw Hall-effect measurements on In0.52Al0.48As/In0.65Ga0.35As/ In0.53Ga0.47As/In0.52Al0.48As quantum wells grown by molecular-beam epitaxy have been carried out to investigate the electrical properties of an electron gas and to determine the subband energies and wave functions in a potential well. Shubnikovde Haas measurements have demonstrated the existence of a quasi-two-dimensional electron gas in the In0.65Ga0.35As potential well between the In0.52Al0.48As and In0.53Ga0.47As barriers. With use of these experimental results and a self-consistent numerical method, the electric subband energies and energy eigenfunctions were determined.",
author = "Kim, {T. W.} and Lee, {J. I.} and Kang, {K. N.} and Lee, {K. S.} and Kyung-hwa Yoo",
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Electric subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers. / Kim, T. W.; Lee, J. I.; Kang, K. N.; Lee, K. S.; Yoo, Kyung-hwa.

In: Physical Review B, Vol. 44, No. 23, 01.01.1991, p. 12891-12893.

Research output: Contribution to journalArticle

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T1 - Electric subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers

AU - Kim, T. W.

AU - Lee, J. I.

AU - Kang, K. N.

AU - Lee, K. S.

AU - Yoo, Kyung-hwa

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AB - Shubnikovde Haas and Van der Pauw Hall-effect measurements on In0.52Al0.48As/In0.65Ga0.35As/ In0.53Ga0.47As/In0.52Al0.48As quantum wells grown by molecular-beam epitaxy have been carried out to investigate the electrical properties of an electron gas and to determine the subband energies and wave functions in a potential well. Shubnikovde Haas measurements have demonstrated the existence of a quasi-two-dimensional electron gas in the In0.65Ga0.35As potential well between the In0.52Al0.48As and In0.53Ga0.47As barriers. With use of these experimental results and a self-consistent numerical method, the electric subband energies and energy eigenfunctions were determined.

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