Electric subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers

T. W. Kim, J. I. Lee, K. N. Kang, K. S. Lee, Kyung-hwa Yoo

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Shubnikovde Haas and Van der Pauw Hall-effect measurements on In0.52Al0.48As/In0.65Ga0.35As/ In0.53Ga0.47As/In0.52Al0.48As quantum wells grown by molecular-beam epitaxy have been carried out to investigate the electrical properties of an electron gas and to determine the subband energies and wave functions in a potential well. Shubnikovde Haas measurements have demonstrated the existence of a quasi-two-dimensional electron gas in the In0.65Ga0.35As potential well between the In0.52Al0.48As and In0.53Ga0.47As barriers. With use of these experimental results and a self-consistent numerical method, the electric subband energies and energy eigenfunctions were determined.

Original languageEnglish
Pages (from-to)12891-12893
Number of pages3
JournalPhysical Review B
Volume44
Issue number23
DOIs
Publication statusPublished - 1991 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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