For the application of 2D/3D nMOSFET transistors, highly phosphorus-doped epitaxial silicon thin films were grown on Si (100) substrates by using a RPCVD system. For the highly P-doped Si films, we suggest a modified impurity distribution function as a function of phosphorous concentration, and characterize the electrical activation of phosphorous dopants in the films. Calculated values with the model are in good agreement with experiment results by Hall Effect measurements and secondary ion mass spectroscopy analyses.
All Science Journal Classification (ASJC) codes
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics