Electrical and band structural analyses of Ti1-xAlxOyfilms grown by atomic layer deposition on p-type GaAs

Youngseo An, Chandreswar Mahata, Changmin Lee, Sungho Choi, Young Chul Byun, Yu Seon Kang, Taeyoon Lee, Jiyoung Kim, Mann-Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Amorphous Ti1-xAlxOyfilms in the Ti-oxide-rich regime (x < 0.5) were deposited on p-type GaAs via atomic layer deposition with titanium isopropoxide, trimethylaluminum, and H2O precursor chemistry. The electrical properties and energy band alignments were examined for the resulting materials with their underlying substrates, and significant frequency dispersion was observed in the accumulation region of the Ti-oxide-rich Ti1-xAlxOyfilms. Although a further reduction in the frequency dispersion and leakage current (under gate electron injection) could be somewhat achieved through a greater addition of Al-oxide in the Ti1-xAlxOyfilm, the simultaneous decrease in the dielectric constant proved problematic in finding an optimal composition for application as a gate dielectric on GaAs. The spectroscopic band alignment measurements of the Ti-oxide-rich Ti1-xAlxOyfilms indicated that the band gaps had a rather slow increase with the addition of Al-oxide, which was primarily compensated for by an increase in the valance band offset, while a nearly-constant conduction band offset with a negative electron barrier height was maintained.

Original languageEnglish
Article number415302
JournalJournal of Physics D: Applied Physics
Volume48
Issue number41
DOIs
Publication statusPublished - 2015 Sep 17

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Oxides
oxides
alignment
Electron injection
Gate dielectrics
Conduction bands
Leakage currents
Band structure
energy bands
conduction bands
Electric properties
Energy gap
leakage
electrons
Permittivity
titanium
Titanium
electrical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

An, Youngseo ; Mahata, Chandreswar ; Lee, Changmin ; Choi, Sungho ; Byun, Young Chul ; Kang, Yu Seon ; Lee, Taeyoon ; Kim, Jiyoung ; Cho, Mann-Ho ; Kim, Hyoungsub. / Electrical and band structural analyses of Ti1-xAlxOyfilms grown by atomic layer deposition on p-type GaAs. In: Journal of Physics D: Applied Physics. 2015 ; Vol. 48, No. 41.
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Electrical and band structural analyses of Ti1-xAlxOyfilms grown by atomic layer deposition on p-type GaAs. / An, Youngseo; Mahata, Chandreswar; Lee, Changmin; Choi, Sungho; Byun, Young Chul; Kang, Yu Seon; Lee, Taeyoon; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 41, 415302, 17.09.2015.

Research output: Contribution to journalArticle

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