Electrical and band structural analyses of Ti_1-xAl_xO_yfilms grown by atomic layer deposition on p-type GaAs

Chemistry

• Amorphous Material 21%
• Application 9%
• Atomic Layer Epitaxy 72%
• Band Gap 23%
• Band Offset 100%
• Chemistry 18%
• Conduction Band 34%
• Dielectric Constant 28%
• Dielectric Material 27%
• Electrical Property 26%
• Electron Particle 34%
• Electronic Band Structure 31%
• Leakage Current 41%
• Reduction 14%
• Valance Band 48%

Engineering & Materials Science

• Atomic layer deposition 96%
• Band structure 17%
• Chemical analysis 8%
• Conduction bands 21%
• Electric properties 13%
• Electron injection 19%
• Electrons 12%
• Energy gap 14%
• Gate dielectrics 17%
• Leakage currents 13%
• Oxides 54%
• Permittivity 12%
• Substrates 8%
• Titanium 12%

Physics & Astronomy

• alignment 19%
• atomic layer epitaxy 65%
• chemistry 10%
• conduction bands 10%
• electric power 13%
• electrical properties 9%
• electrons 10%
• energy bands 11%
• injection 9%
• leakage 10%
• oxides 39%
• permittivity 8%
• titanium 10%