Electrical and ferroelectric properties of SBT thin films formed by photochemical metal-organic deposition

Hyeong Ho Park; Sang Bae Jung; Hyung Ho Park; Tae Song Kim; Ross H. Hill

doi:10.1016/j.snb.2006.12.046

Electrical and ferroelectric properties of SBT thin films formed by photochemical metal-organic deposition

Hyeong Ho Park, Sang Bae Jung, Hyung Ho Park, Tae Song Kim, Ross H. Hill

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The electrical and ferroelectric properties of SBT thin films prepared by photochemical metal-organic deposition using photosensitive starting precursors were characterized. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic groups was possible by UV exposure of spin-coated SBT precursor film at room temperature. The values of measured remnant polarization and leakage current density at 400 kV/cm were 5.8 μC/cm² and 3.48 × 10^-8 A/cm² after anneal treatment at 700 °C of the UV-exposed SBT precursor film and 10.8 μC/cm² and 6.94 × 10^-8 A/cm² after anneal treatment at 750 °C. The SBT films annealed at 700 and 750 °C remained fatigue-free up to 10¹⁰ switching cycles.

Original language	English
Pages (from-to)	289-293
Number of pages	5
Journal	Sensors and Actuators, B: Chemical
Volume	126
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2006.12.046
Publication status	Published - 2007 Sep 20

Bibliographical note

Funding Information:
This research has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr ), which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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title = "Electrical and ferroelectric properties of SBT thin films formed by photochemical metal-organic deposition",

abstract = "The electrical and ferroelectric properties of SBT thin films prepared by photochemical metal-organic deposition using photosensitive starting precursors were characterized. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic groups was possible by UV exposure of spin-coated SBT precursor film at room temperature. The values of measured remnant polarization and leakage current density at 400 kV/cm were 5.8 μC/cm2 and 3.48 × 10-8 A/cm2 after anneal treatment at 700 °C of the UV-exposed SBT precursor film and 10.8 μC/cm2 and 6.94 × 10-8 A/cm2 after anneal treatment at 750 °C. The SBT films annealed at 700 and 750 °C remained fatigue-free up to 1010 switching cycles.",

author = "Park, {Hyeong Ho} and Jung, {Sang Bae} and Park, {Hyung Ho} and Kim, {Tae Song} and Hill, {Ross H.}",

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AU - Jung, Sang Bae

AU - Park, Hyung Ho

AU - Kim, Tae Song

AU - Hill, Ross H.

N1 - Funding Information: This research has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr ), which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.

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Y1 - 2007/9/20

N2 - The electrical and ferroelectric properties of SBT thin films prepared by photochemical metal-organic deposition using photosensitive starting precursors were characterized. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic groups was possible by UV exposure of spin-coated SBT precursor film at room temperature. The values of measured remnant polarization and leakage current density at 400 kV/cm were 5.8 μC/cm2 and 3.48 × 10-8 A/cm2 after anneal treatment at 700 °C of the UV-exposed SBT precursor film and 10.8 μC/cm2 and 6.94 × 10-8 A/cm2 after anneal treatment at 750 °C. The SBT films annealed at 700 and 750 °C remained fatigue-free up to 1010 switching cycles.

AB - The electrical and ferroelectric properties of SBT thin films prepared by photochemical metal-organic deposition using photosensitive starting precursors were characterized. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic groups was possible by UV exposure of spin-coated SBT precursor film at room temperature. The values of measured remnant polarization and leakage current density at 400 kV/cm were 5.8 μC/cm2 and 3.48 × 10-8 A/cm2 after anneal treatment at 700 °C of the UV-exposed SBT precursor film and 10.8 μC/cm2 and 6.94 × 10-8 A/cm2 after anneal treatment at 750 °C. The SBT films annealed at 700 and 750 °C remained fatigue-free up to 1010 switching cycles.

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Electrical and ferroelectric properties of SBT thin films formed by photochemical metal-organic deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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