The electrical and ferroelectric properties of SBT thin films prepared by photochemical metal-organic deposition using photosensitive starting precursors were characterized. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic groups was possible by UV exposure of spin-coated SBT precursor film at room temperature. The values of measured remnant polarization and leakage current density at 400 kV/cm were 5.8 μC/cm2 and 3.48 × 10-8 A/cm2 after anneal treatment at 700 °C of the UV-exposed SBT precursor film and 10.8 μC/cm2 and 6.94 × 10-8 A/cm2 after anneal treatment at 750 °C. The SBT films annealed at 700 and 750 °C remained fatigue-free up to 1010 switching cycles.
|Number of pages||5|
|Journal||Sensors and Actuators, B: Chemical|
|Publication status||Published - 2007 Sept 20|
Bibliographical noteFunding Information:
This research has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr ), which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry