Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution

Sung Ho Hwang, Jung Il Lee, Jin Dong Song, Won Jun Choi, Il Ki Han, Soo Kyung Chang

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Abstract

We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

Original languageEnglish
Pages (from-to)1023-1028
Number of pages6
JournalKey Engineering Materials
Volume277-279
Issue numberI
Publication statusPublished - 2005 Dec 1

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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