Ga doped ZnO (GZO) thin films were deposited on glass substrates at room temperature by continuous composition spread (CCS) method. CCS is thin films growth method of various Ga x Zn 1-x O(GZO) thin film compositions on a substrate, and evaluating critical properties as a function position, which is directly related to material composition. Various compositions of Ga doped ZnO deposited at room temperature were explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 1.46 × 10 -3 Ω cm and an average transmittance above 90% in the 550 nm wavelength region were able to be formed at an Ar pressure of 2.66 Pa and a room temperature. Also, optimized composition of the GZO thin film which had the lowest resistivity and high transmittance was found at 0.8 wt.% Ga 2 O 3 doped in ZnO.
Bibliographical noteFunding Information:
This study was supported by “ a grant-in-aid for R&D program (No. 10030068 )” funded by the Ministry of Knowledge Economy and “the R&D program for Core Converging Research Center Program (No. 2009-0082023 )” funded by the Ministry of Education, Science and Technology, Republic of Korea .
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films