Electrical and optical properties of new transparent conducting oxide In 2O 3:Ta thin films

Honglyoul Ju, Seokmin Hwang, Chang Oh Jeong, Changwoo Park, Eunhee Jeong, Seung Han Park

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In 2O 3:Ta (InTaO) films were deposited on Corning # 1737 glass substrates from a ceramic target In 2O 3:Ta (In 2O 3: Ta 2O 5 = 85 wt.%:15 wt.%) target by using dc magnetron sputtering at various temperatures and oxygen partial pressures. The dependences of the electrical properties (i.e. resistivity, carrier concentration, and Hall mobility) and optical properties of InTaO films on deposition temperatures and oxygen partial pressures were studied. The carrier type of the InTaO films was found to be n-type. The resistivity, the carrier density, the Hall mobility, and the band gap of the InTaO films were in the range of 1.3 ∼ 70 mΩ·cm, 1.2 ∼ 6.5 × 10 20/cm 2, 0.5 ∼ 16 cm 2V·s, and 3.60 ∼ 3.93 eV, respectively, The average optical transmittance of typical InTaO films for wavelengths between 400 and 700 nm was about 80 %.

Original languageEnglish
Pages (from-to)956-961
Number of pages6
JournalJournal of the Korean Physical Society
Volume44
Issue number4
Publication statusPublished - 2004 Apr 1

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electrical properties
optical properties
conduction
oxides
thin films
partial pressure
electrical resistivity
oxygen
transmittance
magnetron sputtering
ceramics
temperature
glass
wavelengths

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Ju, Honglyoul ; Hwang, Seokmin ; Jeong, Chang Oh ; Park, Changwoo ; Jeong, Eunhee ; Park, Seung Han. / Electrical and optical properties of new transparent conducting oxide In 2O 3:Ta thin films. In: Journal of the Korean Physical Society. 2004 ; Vol. 44, No. 4. pp. 956-961.
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abstract = "In 2O 3:Ta (InTaO) films were deposited on Corning # 1737 glass substrates from a ceramic target In 2O 3:Ta (In 2O 3: Ta 2O 5 = 85 wt.{\%}:15 wt.{\%}) target by using dc magnetron sputtering at various temperatures and oxygen partial pressures. The dependences of the electrical properties (i.e. resistivity, carrier concentration, and Hall mobility) and optical properties of InTaO films on deposition temperatures and oxygen partial pressures were studied. The carrier type of the InTaO films was found to be n-type. The resistivity, the carrier density, the Hall mobility, and the band gap of the InTaO films were in the range of 1.3 ∼ 70 mΩ·cm, 1.2 ∼ 6.5 × 10 20/cm 2, 0.5 ∼ 16 cm 2V·s, and 3.60 ∼ 3.93 eV, respectively, The average optical transmittance of typical InTaO films for wavelengths between 400 and 700 nm was about 80 {\%}.",
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Electrical and optical properties of new transparent conducting oxide In 2O 3:Ta thin films. / Ju, Honglyoul; Hwang, Seokmin; Jeong, Chang Oh; Park, Changwoo; Jeong, Eunhee; Park, Seung Han.

In: Journal of the Korean Physical Society, Vol. 44, No. 4, 01.04.2004, p. 956-961.

Research output: Contribution to journalArticle

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