Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure

Min Ji Park, Young Wook Chang, Bong Keun Kang, Min Soo Son, Jae Sang Lee, Sang Yeol Lee, Kyung-hwa Yoo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated p-SWNT/n-ZnO heterojunctions and investigated their electrical and photoelectrical properties. The I-V curves measured across junctions exhibited diode rectifying behaviors, while the I-V curves measured for individual SWNT or ZnO were linear. In addition, we also investigated photoresponsive behaviors for these heterojunctions.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1195-1196
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Heterojunctions
Diodes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Park, M. J., Chang, Y. W., Kang, B. K., Son, M. S., Lee, J. S., Lee, S. Y., & Yoo, K. (2010). Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1195-1196). [5424960] https://doi.org/10.1109/INEC.2010.5424960
Park, Min Ji ; Chang, Young Wook ; Kang, Bong Keun ; Son, Min Soo ; Lee, Jae Sang ; Lee, Sang Yeol ; Yoo, Kyung-hwa. / Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1195-1196
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author = "Park, {Min Ji} and Chang, {Young Wook} and Kang, {Bong Keun} and Son, {Min Soo} and Lee, {Jae Sang} and Lee, {Sang Yeol} and Kyung-hwa Yoo",
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Park, MJ, Chang, YW, Kang, BK, Son, MS, Lee, JS, Lee, SY & Yoo, K 2010, Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424960, pp. 1195-1196, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424960

Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure. / Park, Min Ji; Chang, Young Wook; Kang, Bong Keun; Son, Min Soo; Lee, Jae Sang; Lee, Sang Yeol; Yoo, Kyung-hwa.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1195-1196 5424960.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - We have fabricated p-SWNT/n-ZnO heterojunctions and investigated their electrical and photoelectrical properties. The I-V curves measured across junctions exhibited diode rectifying behaviors, while the I-V curves measured for individual SWNT or ZnO were linear. In addition, we also investigated photoresponsive behaviors for these heterojunctions.

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Park MJ, Chang YW, Kang BK, Son MS, Lee JS, Lee SY et al. Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1195-1196. 5424960 https://doi.org/10.1109/INEC.2010.5424960