Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure

Min Ji Park, Young Wook Chang, Bong Keun Kang, Min Soo Son, Jae Sang Lee, Sang Yeol Lee, Kyung-hwa Yoo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated p-SWNT/n-ZnO heterojunctions and investigated their electrical and photoelectrical properties. The I-V curves measured across junctions exhibited diode rectifying behaviors, while the I-V curves measured for individual SWNT or ZnO were linear. In addition, we also investigated photoresponsive behaviors for these heterojunctions.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1195-1196
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Park, M. J., Chang, Y. W., Kang, B. K., Son, M. S., Lee, J. S., Lee, S. Y., & Yoo, K. (2010). Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1195-1196). [5424960] https://doi.org/10.1109/INEC.2010.5424960