Abstract
Nontoxic Cu-In solution-processed CuInSe2 absorber thin films and resultant photovoltaic cells have been investigated. Acetate-based Cu-In precursors having different Cu/In ratios of 0.8-1.2 were deposited by spin-coating and then selenized in Se atmosphere up to 550 °C. Single tetragonal CuInSe2 phase was dominantly obtained regardless of Cu/In ratios, with the segregation of Cu2-xSe secondary phase only in the case of Cu-rich films as evidenced by Raman spectra. The films with the 1.1 ratio demonstrated a larger grain size of ∼1.06 m with an increased carrier concentration of ∼1.7 × 1018 cm-3 and a decreased band gap of ∼1.02 eV, compared to the values obtained for Cu-deficient absorber films. The resultant best cell efficiency was ∼3.1% for the absorber having the 1.1 ratio, suggesting a potential of this simple spin-coating method as an alternative to typical vacuum processes.
| Original language | English |
|---|---|
| Article number | 245102 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 46 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2013 Jun 19 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Electrical and photovoltaic characteristics of CuInSe2 thin films processed by nontoxic Cu-In precursor solutions. / Choi, Ik Jin; Jang, Jin Woo; Lee, Seung Min; Yeon, Deuk Ho; Jo, Yeon Hwa; Lee, Myung Ho; Yun, Jae Ho; Yoon, Kyung Hoon; Cho, Yong Soo.
In: Journal of Physics D: Applied Physics, Vol. 46, No. 24, 245102, 19.06.2013.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrical and photovoltaic characteristics of CuInSe2 thin films processed by nontoxic Cu-In precursor solutions
AU - Choi, Ik Jin
AU - Jang, Jin Woo
AU - Lee, Seung Min
AU - Yeon, Deuk Ho
AU - Jo, Yeon Hwa
AU - Lee, Myung Ho
AU - Yun, Jae Ho
AU - Yoon, Kyung Hoon
AU - Cho, Yong Soo
PY - 2013/6/19
Y1 - 2013/6/19
N2 - Nontoxic Cu-In solution-processed CuInSe2 absorber thin films and resultant photovoltaic cells have been investigated. Acetate-based Cu-In precursors having different Cu/In ratios of 0.8-1.2 were deposited by spin-coating and then selenized in Se atmosphere up to 550 °C. Single tetragonal CuInSe2 phase was dominantly obtained regardless of Cu/In ratios, with the segregation of Cu2-xSe secondary phase only in the case of Cu-rich films as evidenced by Raman spectra. The films with the 1.1 ratio demonstrated a larger grain size of ∼1.06 m with an increased carrier concentration of ∼1.7 × 1018 cm-3 and a decreased band gap of ∼1.02 eV, compared to the values obtained for Cu-deficient absorber films. The resultant best cell efficiency was ∼3.1% for the absorber having the 1.1 ratio, suggesting a potential of this simple spin-coating method as an alternative to typical vacuum processes.
AB - Nontoxic Cu-In solution-processed CuInSe2 absorber thin films and resultant photovoltaic cells have been investigated. Acetate-based Cu-In precursors having different Cu/In ratios of 0.8-1.2 were deposited by spin-coating and then selenized in Se atmosphere up to 550 °C. Single tetragonal CuInSe2 phase was dominantly obtained regardless of Cu/In ratios, with the segregation of Cu2-xSe secondary phase only in the case of Cu-rich films as evidenced by Raman spectra. The films with the 1.1 ratio demonstrated a larger grain size of ∼1.06 m with an increased carrier concentration of ∼1.7 × 1018 cm-3 and a decreased band gap of ∼1.02 eV, compared to the values obtained for Cu-deficient absorber films. The resultant best cell efficiency was ∼3.1% for the absorber having the 1.1 ratio, suggesting a potential of this simple spin-coating method as an alternative to typical vacuum processes.
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U2 - 10.1088/0022-3727/46/24/245102
DO - 10.1088/0022-3727/46/24/245102
M3 - Article
VL - 46
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 24
M1 - 245102
ER -