Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3

H. S. Chang, S. K. Back, H. Park, H. Hwang, J. H. Oh, W. S. Shin, J. H. Yeo, K. H. Hwang, S. W. Nam, H. D. Lee, C. L. Song, D. W. Moon, M. H. Cho

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

HfO2 films were deposited via Hf(OtBu)4 precursor and ozone oxidant using atomic layer deposition (ALD) atop Al2O 3. We report the impact of annealing conditions on the physical and electrical properties of a HfO2 on Al2O3 /SiN/Si substrate using medium-energy ion scattering spectroscopy, high-resolution transmission electron microscopy, thermal desorption spectra, and electrical measurements. Annealing temperatures influence the microstructure and impurity levels of Hf(OtBu)4HfO2/Al2O 3/SiN films. The leakage currents of Al2O 3-HfO2 bilayer were decreased with the increase of annealing temperature and the structures of the bilayer did not break until 850°C. This change was closely related to the reduction of carbon and organic contamination during annealing. However, annealing at 950°C drastically degraded electrical properties due to the intermixing of the HfO2-Al2O3 bilayer structure.

Original languageEnglish
Pages (from-to)F42-F44
JournalElectrochemical and Solid-State Letters
Volume7
Issue number6
DOIs
Publication statusPublished - 2004 Jun 16

Fingerprint

Atomic layer deposition
Ozone
atomic layer epitaxy
ozone
Electric properties
Physical properties
physical properties
electrical properties
Annealing
annealing
Thermal desorption
ion scattering
High resolution transmission electron microscopy
Oxidants
Leakage currents
electrical measurement
contamination
Contamination
leakage
Carbon

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Chang, H. S. ; Back, S. K. ; Park, H. ; Hwang, H. ; Oh, J. H. ; Shin, W. S. ; Yeo, J. H. ; Hwang, K. H. ; Nam, S. W. ; Lee, H. D. ; Song, C. L. ; Moon, D. W. ; Cho, M. H. / Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3. In: Electrochemical and Solid-State Letters. 2004 ; Vol. 7, No. 6. pp. F42-F44.
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Chang, HS, Back, SK, Park, H, Hwang, H, Oh, JH, Shin, WS, Yeo, JH, Hwang, KH, Nam, SW, Lee, HD, Song, CL, Moon, DW & Cho, MH 2004, 'Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3', Electrochemical and Solid-State Letters, vol. 7, no. 6, pp. F42-F44. https://doi.org/10.1149/1.1707031

Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3. / Chang, H. S.; Back, S. K.; Park, H.; Hwang, H.; Oh, J. H.; Shin, W. S.; Yeo, J. H.; Hwang, K. H.; Nam, S. W.; Lee, H. D.; Song, C. L.; Moon, D. W.; Cho, M. H.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 6, 16.06.2004, p. F42-F44.

Research output: Contribution to journalArticle

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T1 - Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3

AU - Chang, H. S.

AU - Back, S. K.

AU - Park, H.

AU - Hwang, H.

AU - Oh, J. H.

AU - Shin, W. S.

AU - Yeo, J. H.

AU - Hwang, K. H.

AU - Nam, S. W.

AU - Lee, H. D.

AU - Song, C. L.

AU - Moon, D. W.

AU - Cho, M. H.

PY - 2004/6/16

Y1 - 2004/6/16

N2 - HfO2 films were deposited via Hf(OtBu)4 precursor and ozone oxidant using atomic layer deposition (ALD) atop Al2O 3. We report the impact of annealing conditions on the physical and electrical properties of a HfO2 on Al2O3 /SiN/Si substrate using medium-energy ion scattering spectroscopy, high-resolution transmission electron microscopy, thermal desorption spectra, and electrical measurements. Annealing temperatures influence the microstructure and impurity levels of Hf(OtBu)4HfO2/Al2O 3/SiN films. The leakage currents of Al2O 3-HfO2 bilayer were decreased with the increase of annealing temperature and the structures of the bilayer did not break until 850°C. This change was closely related to the reduction of carbon and organic contamination during annealing. However, annealing at 950°C drastically degraded electrical properties due to the intermixing of the HfO2-Al2O3 bilayer structure.

AB - HfO2 films were deposited via Hf(OtBu)4 precursor and ozone oxidant using atomic layer deposition (ALD) atop Al2O 3. We report the impact of annealing conditions on the physical and electrical properties of a HfO2 on Al2O3 /SiN/Si substrate using medium-energy ion scattering spectroscopy, high-resolution transmission electron microscopy, thermal desorption spectra, and electrical measurements. Annealing temperatures influence the microstructure and impurity levels of Hf(OtBu)4HfO2/Al2O 3/SiN films. The leakage currents of Al2O 3-HfO2 bilayer were decreased with the increase of annealing temperature and the structures of the bilayer did not break until 850°C. This change was closely related to the reduction of carbon and organic contamination during annealing. However, annealing at 950°C drastically degraded electrical properties due to the intermixing of the HfO2-Al2O3 bilayer structure.

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