Electrical and structural properties of LT-GaAs

influence of As/Ga flux ratio and growth temperature

M. Luysberg, Hyunchul Sohn, A. Prasad, P. Specht, H. Fujioka, R. Klockenbrink, E. R. Weber

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

The deposition of GaAs by MBE at low temperatures results in a material of unique properties. However, up to now the control and understanding of the electrical and structural properties are unsatisfactory. To investigate the influence of growth parameters on the formation of point defects and electrical properties, the substrate temperature and the As/Ga flux ratio were systematically varied. In a well defined parameter range the lattice expansion was found to be dominated by the formation of As antisite defects. After annealing a high resistivity is obtained independent of the growth conditions. A strong influence of the growth temperature on the band conduction mechanism is observed, whereas a variation of the As/Ga flux ratio induces only slight changes of the temperature dependence of the conductivity.

Original languageEnglish
Pages (from-to)485-490
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume442
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

Fingerprint

Growth temperature
Structural properties
Electric properties
electrical properties
Fluxes
antisite defects
Point defects
Conduction bands
Molecular beam epitaxy
Temperature
point defects
temperature
conduction bands
Annealing
conductivity
Defects
temperature dependence
electrical resistivity
annealing
expansion

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Luysberg, M., Sohn, H., Prasad, A., Specht, P., Fujioka, H., Klockenbrink, R., & Weber, E. R. (1997). Electrical and structural properties of LT-GaAs: influence of As/Ga flux ratio and growth temperature. Materials Research Society Symposium - Proceedings, 442, 485-490.
Luysberg, M. ; Sohn, Hyunchul ; Prasad, A. ; Specht, P. ; Fujioka, H. ; Klockenbrink, R. ; Weber, E. R. / Electrical and structural properties of LT-GaAs : influence of As/Ga flux ratio and growth temperature. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 442. pp. 485-490.
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abstract = "The deposition of GaAs by MBE at low temperatures results in a material of unique properties. However, up to now the control and understanding of the electrical and structural properties are unsatisfactory. To investigate the influence of growth parameters on the formation of point defects and electrical properties, the substrate temperature and the As/Ga flux ratio were systematically varied. In a well defined parameter range the lattice expansion was found to be dominated by the formation of As antisite defects. After annealing a high resistivity is obtained independent of the growth conditions. A strong influence of the growth temperature on the band conduction mechanism is observed, whereas a variation of the As/Ga flux ratio induces only slight changes of the temperature dependence of the conductivity.",
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Luysberg, M, Sohn, H, Prasad, A, Specht, P, Fujioka, H, Klockenbrink, R & Weber, ER 1997, 'Electrical and structural properties of LT-GaAs: influence of As/Ga flux ratio and growth temperature', Materials Research Society Symposium - Proceedings, vol. 442, pp. 485-490.

Electrical and structural properties of LT-GaAs : influence of As/Ga flux ratio and growth temperature. / Luysberg, M.; Sohn, Hyunchul; Prasad, A.; Specht, P.; Fujioka, H.; Klockenbrink, R.; Weber, E. R.

In: Materials Research Society Symposium - Proceedings, Vol. 442, 01.01.1997, p. 485-490.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electrical and structural properties of LT-GaAs

T2 - influence of As/Ga flux ratio and growth temperature

AU - Luysberg, M.

AU - Sohn, Hyunchul

AU - Prasad, A.

AU - Specht, P.

AU - Fujioka, H.

AU - Klockenbrink, R.

AU - Weber, E. R.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The deposition of GaAs by MBE at low temperatures results in a material of unique properties. However, up to now the control and understanding of the electrical and structural properties are unsatisfactory. To investigate the influence of growth parameters on the formation of point defects and electrical properties, the substrate temperature and the As/Ga flux ratio were systematically varied. In a well defined parameter range the lattice expansion was found to be dominated by the formation of As antisite defects. After annealing a high resistivity is obtained independent of the growth conditions. A strong influence of the growth temperature on the band conduction mechanism is observed, whereas a variation of the As/Ga flux ratio induces only slight changes of the temperature dependence of the conductivity.

AB - The deposition of GaAs by MBE at low temperatures results in a material of unique properties. However, up to now the control and understanding of the electrical and structural properties are unsatisfactory. To investigate the influence of growth parameters on the formation of point defects and electrical properties, the substrate temperature and the As/Ga flux ratio were systematically varied. In a well defined parameter range the lattice expansion was found to be dominated by the formation of As antisite defects. After annealing a high resistivity is obtained independent of the growth conditions. A strong influence of the growth temperature on the band conduction mechanism is observed, whereas a variation of the As/Ga flux ratio induces only slight changes of the temperature dependence of the conductivity.

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M3 - Conference article

VL - 442

SP - 485

EP - 490

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

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