Electrical and thermal stress analysis of In2O 3-Ga2O3-ZnO thin-film transistors

Mami Fujii, Tomoki Maruyama, Masahiro Horita, Kiyoshi Uchiyama, Ji Sim Jung, Jang Yeon Kwon, Yukiharu Uraoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Degradation of In2O3-Ga2O3-ZnO (IGZO) thin-film transistors (TFTs)) was studied. We evaluated degradation caused by applying gate voltage and drain voltage stress. A parallel shift of the transfer curve was observed under gate voltage stress. Joule heating caused by the drain current was observed. We tried to reproduce this degradation of the transfer curve change by device simulation. When we assumed the trap level as the density of state (DOS) model and increased two kinds of trap density, we obtained properties that show the same trends as the experimental results. We concluded that two degradation mechanisms occur under gate and drain voltage stress conditions. And then, we tried to improve the TFT characteristics using high pressure water vapor (HPV) annealing. We also found that the cooling conditions after HPV annealing affect the IGZO TFT characteristics.

Original languageEnglish
Title of host publicationZinc Oxide and Related Materials - 2009
Pages93-98
Number of pages6
Publication statusPublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: 2009 Nov 302009 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1201
ISSN (Print)0272-9172

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period09/11/3009/12/4

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Fujii, M., Maruyama, T., Horita, M., Uchiyama, K., Jung, J. S., Kwon, J. Y., & Uraoka, Y. (2010). Electrical and thermal stress analysis of In2O 3-Ga2O3-ZnO thin-film transistors. In Zinc Oxide and Related Materials - 2009 (pp. 93-98). (Materials Research Society Symposium Proceedings; Vol. 1201).