Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor

Bo Jin, Ga Yeon Lee, Chanoh Park, Donghoon Kim, Wonyeong Choi, Jae Woo Yoo, Jae Chul Pyun, Jeong Soo Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2 V−1 s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.

Original languageEnglish
Article number3892
JournalSensors (Switzerland)
Volume18
Issue number11
DOIs
Publication statusPublished - 2018 Nov 12

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Biochemistry
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Electrical and Electronic Engineering

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