Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor

Bo Jin, Ga Yeon Lee, Chanoh Park, Donghoon Kim, Wonyeong Choi, Jae Woo Yoo, Jae Chul Pyun, Jeong Soo Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2 V−1 s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.

Original languageEnglish
Article number3892
JournalSensors (Switzerland)
Volume18
Issue number11
DOIs
Publication statusPublished - 2018 Nov 12

Fingerprint

Ion sensitive field effect transistors
field effect transistors
Ions
membranes
Membranes
Biosensors
Leakage currents
Signal to noise ratio
Buffers
ions
Equipment and Supplies
Noise
parylene
Signal-To-Noise Ratio
Biosensing Techniques
bioinstrumentation
low noise
high current
signal to noise ratios
leakage

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Atomic and Molecular Physics, and Optics
  • Biochemistry
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Jin, Bo ; Lee, Ga Yeon ; Park, Chanoh ; Kim, Donghoon ; Choi, Wonyeong ; Yoo, Jae Woo ; Pyun, Jae Chul ; Lee, Jeong Soo. / Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor. In: Sensors (Switzerland). 2018 ; Vol. 18, No. 11.
@article{5bfbd621329742099be8c8789f3e4a12,
title = "Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor",
abstract = "We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2 V−1 s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1{\%} was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.",
author = "Bo Jin and Lee, {Ga Yeon} and Chanoh Park and Donghoon Kim and Wonyeong Choi and Yoo, {Jae Woo} and Pyun, {Jae Chul} and Lee, {Jeong Soo}",
year = "2018",
month = "11",
day = "12",
doi = "10.3390/s18113892",
language = "English",
volume = "18",
journal = "Sensors",
issn = "1424-3210",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "11",

}

Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor. / Jin, Bo; Lee, Ga Yeon; Park, Chanoh; Kim, Donghoon; Choi, Wonyeong; Yoo, Jae Woo; Pyun, Jae Chul; Lee, Jeong Soo.

In: Sensors (Switzerland), Vol. 18, No. 11, 3892, 12.11.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical characteristics and pH response of a parylene-H sensing membrane in a Si-nanonet ion-sensitive field-effect transistor

AU - Jin, Bo

AU - Lee, Ga Yeon

AU - Park, Chanoh

AU - Kim, Donghoon

AU - Choi, Wonyeong

AU - Yoo, Jae Woo

AU - Pyun, Jae Chul

AU - Lee, Jeong Soo

PY - 2018/11/12

Y1 - 2018/11/12

N2 - We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2 V−1 s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.

AB - We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2 V−1 s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.

UR - http://www.scopus.com/inward/record.url?scp=85056507480&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056507480&partnerID=8YFLogxK

U2 - 10.3390/s18113892

DO - 10.3390/s18113892

M3 - Article

C2 - 30424510

AN - SCOPUS:85056507480

VL - 18

JO - Sensors

JF - Sensors

SN - 1424-3210

IS - 11

M1 - 3892

ER -