Electrical characteristics of Al2O2/TaAlO 4/ SiO2 multi-layer films by different tunnel oxide thicknesses and annealing treatment

Jung Tae Park, Hyo June Kim, Doo Jin Choi

Research output: Contribution to journalArticle

Abstract

In this study, Al2O3/TaAlO4/SiO 2 (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TA10/S multi-layer film at 900°C. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to 104 cycles.

Original languageEnglish
Pages (from-to)461-466
Number of pages6
JournalJournal of the Korean Ceramic Society
Volume47
Issue number5
DOIs
Publication statusPublished - 2010 Sep 30

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Multilayer films
Oxides
Tunnels
Annealing
Data storage equipment
Electron microscopes
Tantalum
Flash memory

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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title = "Electrical characteristics of Al2O2/TaAlO 4/ SiO2 multi-layer films by different tunnel oxide thicknesses and annealing treatment",
abstract = "In this study, Al2O3/TaAlO4/SiO 2 (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TA10/S multi-layer film at 900°C. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3{\%} after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to 104 cycles.",
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Electrical characteristics of Al2O2/TaAlO 4/ SiO2 multi-layer films by different tunnel oxide thicknesses and annealing treatment. / Park, Jung Tae; Kim, Hyo June; Choi, Doo Jin.

In: Journal of the Korean Ceramic Society, Vol. 47, No. 5, 30.09.2010, p. 461-466.

Research output: Contribution to journalArticle

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