Electrical characteristics of Al2O3/Ta2O5/SiO2 multi-layer films using various tunnel oxide thicknesses at different annealing temperatures

Jung Tae Park, Hyo June Kim, Doo Jin Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we investigated the electrical properties of Al2O3/Ta2O5/SiO2 (ATS) films using various tunnel oxide (bottom oxide) thicknesses at different annealing temperatures. With a 5 nm thick tunnel oxide, the program/erase conditions were 11 V for 100 ms and -13 V for 100 ms, respectively. The memory window of the film was 0.91 V. To improve the film quality, the film was annealed at 900 °C. The thickness of the multi-layer film decreased after the annealing process. The program/erase conditions of the annealed films changed to 9 V for 100 ms and -13 V for 100 ms, respectively. The memory window of the annealed film was 1.05 V. The retention properties of the as-deposited and annealed films did not change up to 104 cycles. The electrical characteristics of ATS structures using various tunnel oxide thicknesses at different annealing temperatures were investigated for application in next generation non-volatile memories.

Original languageEnglish
Pages (from-to)728-732
Number of pages5
JournalJournal of Ceramic Processing Research
Volume11
Issue number6
Publication statusPublished - 2010 Jan 1

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Multilayer films
Oxides
Tunnels
Annealing
Temperature
Data storage equipment
Electric properties

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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title = "Electrical characteristics of Al2O3/Ta2O5/SiO2 multi-layer films using various tunnel oxide thicknesses at different annealing temperatures",
abstract = "In this study, we investigated the electrical properties of Al2O3/Ta2O5/SiO2 (ATS) films using various tunnel oxide (bottom oxide) thicknesses at different annealing temperatures. With a 5 nm thick tunnel oxide, the program/erase conditions were 11 V for 100 ms and -13 V for 100 ms, respectively. The memory window of the film was 0.91 V. To improve the film quality, the film was annealed at 900 °C. The thickness of the multi-layer film decreased after the annealing process. The program/erase conditions of the annealed films changed to 9 V for 100 ms and -13 V for 100 ms, respectively. The memory window of the annealed film was 1.05 V. The retention properties of the as-deposited and annealed films did not change up to 104 cycles. The electrical characteristics of ATS structures using various tunnel oxide thicknesses at different annealing temperatures were investigated for application in next generation non-volatile memories.",
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Electrical characteristics of Al2O3/Ta2O5/SiO2 multi-layer films using various tunnel oxide thicknesses at different annealing temperatures. / Park, Jung Tae; Kim, Hyo June; Choi, Doo Jin.

In: Journal of Ceramic Processing Research, Vol. 11, No. 6, 01.01.2010, p. 728-732.

Research output: Contribution to journalArticle

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