Abstract
The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.
| Original language | English |
|---|---|
| Pages (from-to) | 1381-1385 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 210 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2013 Jul |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry
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An, C. H., Mahata, C., Byun, Y. C., Lee, M. S., Kang, Y. S., Cho, M. H., & Kim, H. (2013). Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures. Physica Status Solidi (A) Applications and Materials Science, 210(7), 1381-1385. https://doi.org/10.1002/pssa.201228759