Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Chee Hong An; Chandreswar Mahata; Young Chul Byun; Myung Soo Lee; Yu Seon Kang; Mann Ho Cho; Hyoungsub Kim

doi:10.1002/pssa.201228759

Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures

Chee Hong An, Chandreswar Mahata, Young Chul Byun, Myung Soo Lee, Yu Seon Kang, Mann Ho Cho, Hyoungsub Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO₂ films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO₂ film side.

Original language	English
Pages (from-to)	1381-1385
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	210
Issue number	7
DOIs	https://doi.org/10.1002/pssa.201228759
Publication status	Published - 2013 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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@article{dc2e2d6231d2446ca322315de84a9ff0,

title = "Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures",

abstract = "The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.",

author = "An, {Chee Hong} and Chandreswar Mahata and Byun, {Young Chul} and Lee, {Myung Soo} and Kang, {Yu Seon} and Cho, {Mann Ho} and Hyoungsub Kim",

year = "2013",

month = jul,

doi = "10.1002/pssa.201228759",

language = "English",

volume = "210",

pages = "1381--1385",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "7",

}

Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures. / An, Chee Hong; Mahata, Chandreswar; Byun, Young Chul; Lee, Myung Soo; Kang, Yu Seon; Cho, Mann Ho; Kim, Hyoungsub.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 7, 07.2013, p. 1381-1385.

Research output: Contribution to journal › Article › peer-review

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T1 - Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

AU - An, Chee Hong

AU - Mahata, Chandreswar

AU - Byun, Young Chul

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AU - Kang, Yu Seon

AU - Cho, Mann Ho

AU - Kim, Hyoungsub

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AB - The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.

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