Abstract
The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.
| Original language | English |
|---|---|
| Pages (from-to) | 1381-1385 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 210 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2013 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures. / An, Chee Hong; Mahata, Chandreswar; Byun, Young Chul; Lee, Myung Soo; Kang, Yu Seon; Cho, Mann Ho; Kim, Hyoungsub.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 7, 01.07.2013, p. 1381-1385.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures
AU - An, Chee Hong
AU - Mahata, Chandreswar
AU - Byun, Young Chul
AU - Lee, Myung Soo
AU - Kang, Yu Seon
AU - Cho, Mann Ho
AU - Kim, Hyoungsub
PY - 2013/7/1
Y1 - 2013/7/1
N2 - The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.
AB - The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.
UR - http://www.scopus.com/inward/record.url?scp=84881390004&partnerID=8YFLogxK
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U2 - 10.1002/pssa.201228759
DO - 10.1002/pssa.201228759
M3 - Article
AN - SCOPUS:84881390004
VL - 210
SP - 1381
EP - 1385
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 7
ER -