Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Chee Hong An; Chandreswar Mahata; Young Chul Byun; Myung Soo Lee; Yu Seon Kang; Mann Ho Cho; Hyoungsub Kim

doi:10.1002/pssa.201228759

Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures

Chee Hong An, Chandreswar Mahata, Young Chul Byun, Myung Soo Lee, Yu Seon Kang, Mann Ho Cho, Hyoungsub Kim

Department of Physics

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO₂ films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO₂ film side.

Original language	English
Pages (from-to)	1381-1385
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	210
Issue number	7
DOIs	https://doi.org/10.1002/pssa.201228759
Publication status	Published - 2013 Jul 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Cite this

An, C. H., Mahata, C., Byun, Y. C., Lee, M. S., Kang, Y. S., Cho, M. H., & Kim, H. (2013). Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures. Physica Status Solidi (A) Applications and Materials Science, 210(7), 1381-1385. https://doi.org/10.1002/pssa.201228759

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abstract = "The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.",

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Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures. / An, Chee Hong; Mahata, Chandreswar; Byun, Young Chul; Lee, Myung Soo; Kang, Yu Seon; Cho, Mann Ho; Kim, Hyoungsub.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 7, 01.07.2013, p. 1381-1385.

Research output: Contribution to journal › Article

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10.1002/pssa.201228759