Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Chee Hong An, Chandreswar Mahata, Young Chul Byun, Myung Soo Lee, Yu Seon Kang, Mann-Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.

Original languageEnglish
Pages (from-to)1381-1385
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number7
DOIs
Publication statusPublished - 2013 Jul 1

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Electric properties
Capacitance
capacitance
electrical properties
traps
Grain growth
Temperature
Defects
temperature
defects

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

An, Chee Hong ; Mahata, Chandreswar ; Byun, Young Chul ; Lee, Myung Soo ; Kang, Yu Seon ; Cho, Mann-Ho ; Kim, Hyoungsub. / Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures. In: Physica Status Solidi (A) Applications and Materials Science. 2013 ; Vol. 210, No. 7. pp. 1381-1385.
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Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures. / An, Chee Hong; Mahata, Chandreswar; Byun, Young Chul; Lee, Myung Soo; Kang, Yu Seon; Cho, Mann-Ho; Kim, Hyoungsub.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 7, 01.07.2013, p. 1381-1385.

Research output: Contribution to journalArticle

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