Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Chee Hong An; Chandreswar Mahata; Young Chul Byun; Myung Soo Lee; Yu Seon Kang; Mann Ho Cho; Hyoungsub Kim

doi:10.1002/pssa.201228759

Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures

Chee Hong An, Chandreswar Mahata, Young Chul Byun, Myung Soo Lee, Yu Seon Kang, Mann Ho Cho, Hyoungsub Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO₂ films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO₂ film side.

Original language	English
Pages (from-to)	1381-1385
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	210
Issue number	7
DOIs	https://doi.org/10.1002/pssa.201228759
Publication status	Published - 2013 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.201228759

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abstract = "The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.",

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AU - An, Chee Hong

AU - Mahata, Chandreswar

AU - Byun, Young Chul

AU - Lee, Myung Soo

AU - Kang, Yu Seon

AU - Cho, Mann Ho

AU - Kim, Hyoungsub

PY - 2013/7

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N2 - The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.

AB - The effect of the deposition temperature (200, 250, and 300 °C) on the electrical properties of the atomic-layer-deposited [atomic layer deposition (ALD)] HfO2 films on InP was studied. A significant grain growth as well as an increase in the accumulation capacitance occurred by increasing the ALD temperature from 200 to 250 °C. However, a further increase to 300 °C degraded the electrical properties as verified by various electrical characterizations, including an accumulation capacitance lowering, a near-interface defect (trap) formation, and an increase in the electrical stress-induced new trap generation, due to a significant In out-diffusion to the HfO2 film side.

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Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures

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