Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size

Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Sang Myung Lee, Ilgu Yun, Jae Min Myoung

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm2/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.

Original languageEnglish
Pages (from-to)929-934
Number of pages6
JournalACS Applied Materials and Interfaces
Volume7
Issue number1
DOIs
Publication statusPublished - 2015 Jan 14

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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