Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size

Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Sang Myung Lee, Ilgu Yun, Jae Min Myoung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm2/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.

Original languageEnglish
Pages (from-to)929-934
Number of pages6
JournalACS Applied Materials and Interfaces
Volume7
Issue number1
DOIs
Publication statusPublished - 2015 Jan 14

Fingerprint

Silicon
Nanowires
Metals
Field effect transistors
Catalysts
Surface scattering
Surface defects
Wave functions
Threshold voltage
Printing
Etching
Adhesives
Electric properties
Scattering
Electrons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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title = "Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size",
abstract = "The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm2/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.",
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Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size. / Lee, Sang Hoon; Lee, Tae Il; Lee, Su Jeong; Lee, Sang Myung; Yun, Ilgu; Myoung, Jae Min.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 1, 14.01.2015, p. 929-934.

Research output: Contribution to journalArticle

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AU - Lee, Sang Myung

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AU - Myoung, Jae Min

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