Electrical characteristics of metal silicide field emitters

Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik

Research output: Contribution to conferencePaper

11 Citations (Scopus)

Abstract

To improve silicon field emitter, Ti and Co silicides were formed on silicon tips. Silicides were produced by deposition of metal (Ti and Co) and subsequent annealing. I-V characteristics of as-grown silicon tips and silicide emitters were investigated. Turn-on voltage and emission current of silicon tips were 220 V and 10-8 A, respectively. Ti and Co silicide lowered turn-on voltage significantly. The emission current of Ti and Co silicide emitters were 140 V and 180 V, respectively. Both silicides increased emission current to order of 10-7 A. Ti and Co silicide emitters have enhanced field emission of silicon tips due to large emitting area and lower work function, respectively.

Original languageEnglish
Pages188-191
Number of pages4
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

Fingerprint

emitters
silicides
silicon
metals
electric potential
field emission
annealing

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

Cite this

Chi, E. J., Shim, J. Y., & Baik, H. K. (1996). Electrical characteristics of metal silicide field emitters. 188-191. Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .
Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Hong Koo. / Electrical characteristics of metal silicide field emitters. Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .4 p.
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Chi, EJ, Shim, JY & Baik, HK 1996, 'Electrical characteristics of metal silicide field emitters' Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, 96/7/7 - 96/7/12, pp. 188-191.

Electrical characteristics of metal silicide field emitters. / Chi, Eung Joon; Shim, Jae Yeob; Baik, Hong Koo.

1996. 188-191 Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .

Research output: Contribution to conferencePaper

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AB - To improve silicon field emitter, Ti and Co silicides were formed on silicon tips. Silicides were produced by deposition of metal (Ti and Co) and subsequent annealing. I-V characteristics of as-grown silicon tips and silicide emitters were investigated. Turn-on voltage and emission current of silicon tips were 220 V and 10-8 A, respectively. Ti and Co silicide lowered turn-on voltage significantly. The emission current of Ti and Co silicide emitters were 140 V and 180 V, respectively. Both silicides increased emission current to order of 10-7 A. Ti and Co silicide emitters have enhanced field emission of silicon tips due to large emitting area and lower work function, respectively.

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Chi EJ, Shim JY, Baik HK. Electrical characteristics of metal silicide field emitters. 1996. Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .