Electrical characteristics of solutionprocessed InGaZnO thin film transistors depending on Ga concentration

Gun Hee Kim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

We investigated the role of Ga in solution-processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off-current of TFTs. This is a result of the Ga ions forming stronger chemical bonds with oxygen, as compared to the Zn and In ions, acting as a carrier suppressor. It was verified, using X-ray photoelectron spectroscopy (XPS), that the vacancy-related oxygen 1s peak was decreased when the Ga content increased.

Original languageEnglish
Pages (from-to)1677-1679
Number of pages3
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume207
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

Fingerprint

Thin film transistors
transistors
Ions
Oxygen
suppressors
Chemical bonds
oxygen
thin films
chemical bonds
Vacancies
Carrier concentration
ions
X ray photoelectron spectroscopy
photoelectron spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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Electrical characteristics of solutionprocessed InGaZnO thin film transistors depending on Ga concentration. / Kim, Gun Hee; Jeong, Woong Hee; Kim, Hyun Jae.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, No. 7, 01.07.2010, p. 1677-1679.

Research output: Contribution to journalArticle

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