We report on the formation of V 2 O 5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VO x . DC magnetron sputtering was used to obtain an initial amorphous VO x film on p-Si substrate, followed by O 2 - and N 2 -RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O 2 -RTA is more effective to achieve the semiconducting phase, V 2 O 5 than N 2 -RTA, which caused some electrically conducting phases such as V 4 O 9 or V 6 O 13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V 2 O 5 .
|Number of pages||5|
|Journal||Applied Surface Science|
|Publication status||Published - 2005 May 15|
|Event||12th International Conference on Solid Films and Surfaces - Hammatsu, Japan|
Duration: 2004 Jun 21 → 2004 Jun 25
Bibliographical noteFunding Information:
The authors are very appreciative of the support from Brain Korea 21 Program.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films