Electrical characteristics of V 2 O 5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing

M. H. Yoon, Seongil Im

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


We report on the formation of V 2 O 5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VO x . DC magnetron sputtering was used to obtain an initial amorphous VO x film on p-Si substrate, followed by O 2 - and N 2 -RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O 2 -RTA is more effective to achieve the semiconducting phase, V 2 O 5 than N 2 -RTA, which caused some electrically conducting phases such as V 4 O 9 or V 6 O 13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V 2 O 5 .

Original languageEnglish
Pages (from-to)444-448
Number of pages5
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2005 May 15
Event12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Duration: 2004 Jun 212004 Jun 25

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Electrical characteristics of V <sub>2</sub> O <sub>5</sub> thin films formed on p-Si by sputter-deposition and rapid thermal annealing'. Together they form a unique fingerprint.

Cite this