Electrical characteristics of V2O5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing

M. H. Yoon, Seongil Im

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

We report on the formation of V2O5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VOx. DC magnetron sputtering was used to obtain an initial amorphous VOx film on p-Si substrate, followed by O2- and N 2-RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O2-RTA is more effective to achieve the semiconducting phase, V2O5 than N 2-RTA, which caused some electrically conducting phases such as V4O9 or V6O13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V2O5.

Original languageEnglish
Pages (from-to)444-448
Number of pages5
JournalApplied Surface Science
Volume244
Issue number1-4
DOIs
Publication statusPublished - 2005 May 15
Event12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Duration: 2004 Jun 212004 Jun 25

Fingerprint

Sputter deposition
Rapid thermal annealing
Thin films
Vanadium
Amorphous films
Magnetron sputtering
Oxides
Semiconductor materials
X ray diffraction
vanadium pentoxide
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Electrical characteristics of V2O5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing",
abstract = "We report on the formation of V2O5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VOx. DC magnetron sputtering was used to obtain an initial amorphous VOx film on p-Si substrate, followed by O2- and N 2-RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O2-RTA is more effective to achieve the semiconducting phase, V2O5 than N 2-RTA, which caused some electrically conducting phases such as V4O9 or V6O13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V2O5.",
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Electrical characteristics of V2O5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing. / Yoon, M. H.; Im, Seongil.

In: Applied Surface Science, Vol. 244, No. 1-4, 15.05.2005, p. 444-448.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electrical characteristics of V2O5 thin films formed on p-Si by sputter-deposition and rapid thermal annealing

AU - Yoon, M. H.

AU - Im, Seongil

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N2 - We report on the formation of V2O5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VOx. DC magnetron sputtering was used to obtain an initial amorphous VOx film on p-Si substrate, followed by O2- and N 2-RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O2-RTA is more effective to achieve the semiconducting phase, V2O5 than N 2-RTA, which caused some electrically conducting phases such as V4O9 or V6O13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V2O5.

AB - We report on the formation of V2O5 semiconductor thin films using rapid thermal annealing (RTA) on sputter-deposited amorphous VOx. DC magnetron sputtering was used to obtain an initial amorphous VOx film on p-Si substrate, followed by O2- and N 2-RTA at two different temperatures of 400 and 500 °C for 3 min. According to X-ray diffraction results, O2-RTA is more effective to achieve the semiconducting phase, V2O5 than N 2-RTA, which caused some electrically conducting phases such as V4O9 or V6O13 at 400 °C. Electrical characterization on Au/vanadium oxide/p-Si structure exhibited ohmic-like behavior when the thin film mainly contains those metallic phases while the structures were strongly rectifying once the film consists of the semiconducting phase, V2O5.

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