Electrical characterization and conduction mechanism of high-k Ti 1-xSixO2 gate dielectrics

Chang Eun Kim, Pyung Moon, Edward Namkyu Cho, Sungyeon Kim, Jae Min Myoung, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ti1-xSixO2 dielectric thin films were prepared by co-sputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO 2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenkel emission.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages242-243
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Dielectric films
Gate dielectrics
Leakage currents
Thin films
Sputtering
Electric properties
Permittivity
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, C. E., Moon, P., Cho, E. N., Kim, S., Myoung, J. M., & Yun, I. (2010). Electrical characterization and conduction mechanism of high-k Ti 1-xSixO2 gate dielectrics. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 242-243). [5424660] https://doi.org/10.1109/INEC.2010.5424660
Kim, Chang Eun ; Moon, Pyung ; Cho, Edward Namkyu ; Kim, Sungyeon ; Myoung, Jae Min ; Yun, Ilgu. / Electrical characterization and conduction mechanism of high-k Ti 1-xSixO2 gate dielectrics. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 242-243
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abstract = "Ti1-xSixO2 dielectric thin films were prepared by co-sputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO 2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenkel emission.",
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Kim, CE, Moon, P, Cho, EN, Kim, S, Myoung, JM & Yun, I 2010, Electrical characterization and conduction mechanism of high-k Ti 1-xSixO2 gate dielectrics. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424660, pp. 242-243, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424660

Electrical characterization and conduction mechanism of high-k Ti 1-xSixO2 gate dielectrics. / Kim, Chang Eun; Moon, Pyung; Cho, Edward Namkyu; Kim, Sungyeon; Myoung, Jae Min; Yun, Ilgu.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 242-243 5424660.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Ti1-xSixO2 dielectric thin films were prepared by co-sputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO 2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenkel emission.

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Kim CE, Moon P, Cho EN, Kim S, Myoung JM, Yun I. Electrical characterization and conduction mechanism of high-k Ti 1-xSixO2 gate dielectrics. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 242-243. 5424660 https://doi.org/10.1109/INEC.2010.5424660