Electrical characterization of single nanowire based ZnO Schottky diodes

S. N. Das, J. P. Kar, J. H. Choi, K. J. Moon, T. I. Lee, J. M. Myoung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, the barrier height values of Au/ n-ZnO nanowire Schottky diode were obtained from the temperature dependent I-V measurements. The calculated barrier height of Schottky contacts to n-ZnO nanowire using the thermionic field emission model is in good agreement with the value obtained from x-ray photoelectron spectroscopy (XPS) measurements.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1197-1198
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Das, S. N., Kar, J. P., Choi, J. H., Moon, K. J., Lee, T. I., & Myoung, J. M. (2010). Electrical characterization of single nanowire based ZnO Schottky diodes. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1197-1198). [5424950] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424950