Electrical characterization of single nanowire based ZnO Schottky diodes

S. N. Das, J. P. Kar, J. H. Choi, K. J. Moon, T. I. Lee, J. M. Myoung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, the barrier height values of Au/ n-ZnO nanowire Schottky diode were obtained from the temperature dependent I-V measurements. The calculated barrier height of Schottky contacts to n-ZnO nanowire using the thermionic field emission model is in good agreement with the value obtained from x-ray photoelectron spectroscopy (XPS) measurements.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1197-1198
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Nanowires
Diodes
Thermionic emission
Photoelectron spectroscopy
Field emission
X rays
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Das, S. N., Kar, J. P., Choi, J. H., Moon, K. J., Lee, T. I., & Myoung, J. M. (2010). Electrical characterization of single nanowire based ZnO Schottky diodes. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1197-1198). [5424950] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424950
Das, S. N. ; Kar, J. P. ; Choi, J. H. ; Moon, K. J. ; Lee, T. I. ; Myoung, J. M. / Electrical characterization of single nanowire based ZnO Schottky diodes. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1197-1198 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).
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Das, SN, Kar, JP, Choi, JH, Moon, KJ, Lee, TI & Myoung, JM 2010, Electrical characterization of single nanowire based ZnO Schottky diodes. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424950, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1197-1198, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424950

Electrical characterization of single nanowire based ZnO Schottky diodes. / Das, S. N.; Kar, J. P.; Choi, J. H.; Moon, K. J.; Lee, T. I.; Myoung, J. M.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1197-1198 5424950 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Das SN, Kar JP, Choi JH, Moon KJ, Lee TI, Myoung JM. Electrical characterization of single nanowire based ZnO Schottky diodes. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1197-1198. 5424950. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424950