Electrical contact tunable direct printing route for a ZnO nanowire Schottky diode

Tae Il Lee, Won Jin Choi, Jyoti Prakash Kar, Youn Hee Kang, Joo Hee Jeon, Jee Ho Park, Youn Sang Kim, Hong Koo Baik, Jae Min Myoung

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21 Citations (Scopus)

Abstract

Although writing was the first human process for communication, it may now become the main process in the electronics industry, because in the industry the programmability as an inherent property is a necessary requirement for next-generation electronics. As an effort to open the era of writing electronics, here we show the feasibility of the direct printing of a high-performance inorganic single crystalline semiconductor nanowire (NW) Schottky diode (SD), including Schottky and Ohmic contacts in series, using premetallization and wrapping with metallic nanofoil. To verify the feasibility of our process, SDs made of Al-premetalized ZnO NWs and plain ZnO NWs were compared with each other. Even with cold direct printing, the Al-premetalized ZnO NW SD showed higher performance, specifically 1.52 in the ideality factor and 1.58 × 105 in its rectification ratio.

Original languageEnglish
Pages (from-to)3517-3523
Number of pages7
JournalNano letters
Volume10
Issue number9
DOIs
Publication statusPublished - 2010 Sep 8

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Lee, T. I., Choi, W. J., Kar, J. P., Kang, Y. H., Jeon, J. H., Park, J. H., Kim, Y. S., Baik, H. K., & Myoung, J. M. (2010). Electrical contact tunable direct printing route for a ZnO nanowire Schottky diode. Nano letters, 10(9), 3517-3523. https://doi.org/10.1021/nl101684c