Electrical joule heating for the isolation of ZnO nanowire channel and subsequent high-performance 1D circuit integration

Syed Raza Ali Raza, June Yeong Lim, Zamir ul Hassan, Seongil Im, Young Tack Lee

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, electrical Joule heating (J-H) was employed for the first time to electrically isolate ZnO nanowire FETs array for one dimensional (1D) logic applications without any physical and electrical damages. The electrical properties of the isolated nanowire FETs were found to be superior to non-isolated FETs came from the neighboring gate effect. Finally, we investigated ZnO nanowire-based NOT, NAND, and NOR logic gates with the J-H nanowire isolation technique. The isolated logic gates clearly show much lower output voltage off level than the non-isolated circuits thus resulting in more accurate and reliable 1D electronic applications.

Original languageEnglish
Pages (from-to)1424-1428
Number of pages5
JournalCurrent Applied Physics
Volume20
Issue number12
DOIs
Publication statusPublished - 2020 Dec

Bibliographical note

Funding Information:
YT Lee acknowledges the National Research Foundation of Korea (NRF) (Grant No. 2019R1F1A1060173 ). S Im acknowledges the National Research Foundation of Korea (NRF) (SRC program, Grant No. 2017R1A5A1014862 , vdWMRC center). SRA Raza acknowledges financial support from Higher Education Commission (HEC) of Pakistan and University of Azad Jammu and Kashmir .

Funding Information:
YT Lee acknowledges the National Research Foundation of Korea (NRF) (Grant No. 2019R1F1A1060173). S Im acknowledges the National Research Foundation of Korea (NRF) (SRC program, Grant No. 2017R1A5A1014862, vdWMRC center). SRA Raza acknowledges financial support from Higher Education Commission (HEC) of Pakistan and University of Azad Jammu and Kashmir.

Publisher Copyright:
© 2020 Korean Physical Society

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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