Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes

Jianzheng Hu, Lianqiao Yang, Moo Whan Shin

Research output: Contribution to journalArticle

128 Citations (Scopus)

Abstract

The degradation of high power GaN/InGaN blue light-emitting diodes (LEDs) was investigated by considering the electrical, optical and thermal ageing characteristics. The LED samples were stressed at the elevated temperature of 85 °C with an injection current of 350 mA. Changes in the tunnelling current and series resistance for the electrical characteristics and an initial increase followed by a gradual decrease for the optical power were observed. Variations of the thermal resistance in the chip and package were found to be 2 °C W-1 and 0.3 °C W-1, respectively. The responsible factors were proposed to be: (a) the dopant activation and changes of defects in the chip level; (b) the yellowing of the optical lens and structural degradations such as generating voids or delaminations in the package level. The changes in the electrical, optical and thermal characteristics were found to depend on and affect each other. The internal relationship for the characteristics of the three aspects was explained.

Original languageEnglish
Article number035107
JournalJournal of Physics D: Applied Physics
Volume41
Issue number3
DOIs
Publication statusPublished - 2008 Feb 7

Fingerprint

thermal degradation
Light emitting diodes
Pyrolysis
light emitting diodes
degradation
Degradation
Thermal aging
Delamination
Heat resistance
Lenses
Chemical activation
chips
Doping (additives)
Defects
thermal resistance
voids
lenses
activation
injection
Temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes",
abstract = "The degradation of high power GaN/InGaN blue light-emitting diodes (LEDs) was investigated by considering the electrical, optical and thermal ageing characteristics. The LED samples were stressed at the elevated temperature of 85 °C with an injection current of 350 mA. Changes in the tunnelling current and series resistance for the electrical characteristics and an initial increase followed by a gradual decrease for the optical power were observed. Variations of the thermal resistance in the chip and package were found to be 2 °C W-1 and 0.3 °C W-1, respectively. The responsible factors were proposed to be: (a) the dopant activation and changes of defects in the chip level; (b) the yellowing of the optical lens and structural degradations such as generating voids or delaminations in the package level. The changes in the electrical, optical and thermal characteristics were found to depend on and affect each other. The internal relationship for the characteristics of the three aspects was explained.",
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Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes. / Hu, Jianzheng; Yang, Lianqiao; Shin, Moo Whan.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 3, 035107, 07.02.2008.

Research output: Contribution to journalArticle

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