Electrical properties and crystal structures of nitrogen-doped Ge 2 Sb 2 Te 5 thin film for phase change memory

Suk Min Kim, Min Jung Shin, Doo Jin Choi, K. N. Lee, S. K. Hong, Y. J. Park

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

The characteristics of nitrogen-doped Ge 2 Sb 2 Te 5 thin films deposited on Si (100) substrates were investigated by X-ray diffraction (XRD) analysis, four-point probe and atomic force microscopy (AFM). It was found that the sheet resistance of the films annealed at 260 and 300°C increased and the face-centered cubic (fcc) peaks of crystalline state of the films gradually disappeared with the increase of N 2 gas flow rate. At the N 2 gas flow rate of 12 sccm, however, the sheet resistance of the film remarkably dropped to around that of crystalline state of undoped film and the crystal structure transformed from fee to hexagonal. The RMS roughness values of the films decreased by the nitrogen doping. However, the surface of the film deposited at the N 2 gas flow rate of 12 sccm was very rough due to crystallization of the film into hexagonal when the film was annealed at 260°C for 20 min.

Original languageEnglish
Pages (from-to)322-326
Number of pages5
JournalThin Solid Films
Volume469-470
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2004 Dec 22

Fingerprint

Phase change memory
Electric properties
Nitrogen
Crystal structure
electrical properties
nitrogen
Thin films
crystal structure
thin films
gas flow
Flow of gases
flow velocity
Sheet resistance
Flow rate
Crystalline materials
Crystallization
X ray diffraction analysis
Atomic force microscopy
roughness
Surface roughness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Suk Min ; Shin, Min Jung ; Choi, Doo Jin ; Lee, K. N. ; Hong, S. K. ; Park, Y. J. / Electrical properties and crystal structures of nitrogen-doped Ge 2 Sb 2 Te 5 thin film for phase change memory In: Thin Solid Films. 2004 ; Vol. 469-470, No. SPEC. ISS. pp. 322-326.
@article{3ac796ec5b8e46bcbae19022217b8074,
title = "Electrical properties and crystal structures of nitrogen-doped Ge 2 Sb 2 Te 5 thin film for phase change memory",
abstract = "The characteristics of nitrogen-doped Ge 2 Sb 2 Te 5 thin films deposited on Si (100) substrates were investigated by X-ray diffraction (XRD) analysis, four-point probe and atomic force microscopy (AFM). It was found that the sheet resistance of the films annealed at 260 and 300°C increased and the face-centered cubic (fcc) peaks of crystalline state of the films gradually disappeared with the increase of N 2 gas flow rate. At the N 2 gas flow rate of 12 sccm, however, the sheet resistance of the film remarkably dropped to around that of crystalline state of undoped film and the crystal structure transformed from fee to hexagonal. The RMS roughness values of the films decreased by the nitrogen doping. However, the surface of the film deposited at the N 2 gas flow rate of 12 sccm was very rough due to crystallization of the film into hexagonal when the film was annealed at 260°C for 20 min.",
author = "Kim, {Suk Min} and Shin, {Min Jung} and Choi, {Doo Jin} and Lee, {K. N.} and Hong, {S. K.} and Park, {Y. J.}",
year = "2004",
month = "12",
day = "22",
doi = "10.1016/j.tsf.2004.08.142",
language = "English",
volume = "469-470",
pages = "322--326",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "SPEC. ISS.",

}

Electrical properties and crystal structures of nitrogen-doped Ge 2 Sb 2 Te 5 thin film for phase change memory . / Kim, Suk Min; Shin, Min Jung; Choi, Doo Jin; Lee, K. N.; Hong, S. K.; Park, Y. J.

In: Thin Solid Films, Vol. 469-470, No. SPEC. ISS., 22.12.2004, p. 322-326.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical properties and crystal structures of nitrogen-doped Ge 2 Sb 2 Te 5 thin film for phase change memory

AU - Kim, Suk Min

AU - Shin, Min Jung

AU - Choi, Doo Jin

AU - Lee, K. N.

AU - Hong, S. K.

AU - Park, Y. J.

PY - 2004/12/22

Y1 - 2004/12/22

N2 - The characteristics of nitrogen-doped Ge 2 Sb 2 Te 5 thin films deposited on Si (100) substrates were investigated by X-ray diffraction (XRD) analysis, four-point probe and atomic force microscopy (AFM). It was found that the sheet resistance of the films annealed at 260 and 300°C increased and the face-centered cubic (fcc) peaks of crystalline state of the films gradually disappeared with the increase of N 2 gas flow rate. At the N 2 gas flow rate of 12 sccm, however, the sheet resistance of the film remarkably dropped to around that of crystalline state of undoped film and the crystal structure transformed from fee to hexagonal. The RMS roughness values of the films decreased by the nitrogen doping. However, the surface of the film deposited at the N 2 gas flow rate of 12 sccm was very rough due to crystallization of the film into hexagonal when the film was annealed at 260°C for 20 min.

AB - The characteristics of nitrogen-doped Ge 2 Sb 2 Te 5 thin films deposited on Si (100) substrates were investigated by X-ray diffraction (XRD) analysis, four-point probe and atomic force microscopy (AFM). It was found that the sheet resistance of the films annealed at 260 and 300°C increased and the face-centered cubic (fcc) peaks of crystalline state of the films gradually disappeared with the increase of N 2 gas flow rate. At the N 2 gas flow rate of 12 sccm, however, the sheet resistance of the film remarkably dropped to around that of crystalline state of undoped film and the crystal structure transformed from fee to hexagonal. The RMS roughness values of the films decreased by the nitrogen doping. However, the surface of the film deposited at the N 2 gas flow rate of 12 sccm was very rough due to crystallization of the film into hexagonal when the film was annealed at 260°C for 20 min.

UR - http://www.scopus.com/inward/record.url?scp=10044257603&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10044257603&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.08.142

DO - 10.1016/j.tsf.2004.08.142

M3 - Article

VL - 469-470

SP - 322

EP - 326

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - SPEC. ISS.

ER -