Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 Å on ru metal electrode

Jeon Ho Kim, Soon Gil Yoon, Seung Jin Yeom, Hyun Kyung Woo, Deok Sin Kil, Jae Sung Roh, Hyun Chul Sohn

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

HfO3 films with an EOT of 9 Å were deposited at 300°C on Ru/TiN/SiO2/Si substrates using an atomic layer deposition technique and the electrical properties of Ru/HfO2/Ru capacitors were investigated as a function of the film thickness and annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films with a thickness of 7 nm were ∼19, 0.9%, and 8 × 10 -7 A/cm2, respectively. The capacitors show the stable electrical properties in a thermal treatment up to 600°C.

Original languageEnglish
Pages (from-to)F17-F19
JournalElectrochemical and Solid-State Letters
Volume8
Issue number6
DOIs
Publication statusPublished - 2005 Jul 4

Fingerprint

Oxides
capacitors
Electric properties
Capacitors
Metals
electrical properties
Electrodes
electrodes
oxides
Atomic layer deposition
Dielectric losses
atomic layer epitaxy
dielectric loss
Leakage currents
metals
Film thickness
leakage
Permittivity
film thickness
Current density

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Jeon Ho ; Yoon, Soon Gil ; Yeom, Seung Jin ; Woo, Hyun Kyung ; Kil, Deok Sin ; Roh, Jae Sung ; Sohn, Hyun Chul. / Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 Å on ru metal electrode. In: Electrochemical and Solid-State Letters. 2005 ; Vol. 8, No. 6. pp. F17-F19.
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abstract = "HfO3 films with an EOT of 9 {\AA} were deposited at 300°C on Ru/TiN/SiO2/Si substrates using an atomic layer deposition technique and the electrical properties of Ru/HfO2/Ru capacitors were investigated as a function of the film thickness and annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films with a thickness of 7 nm were ∼19, 0.9{\%}, and 8 × 10 -7 A/cm2, respectively. The capacitors show the stable electrical properties in a thermal treatment up to 600°C.",
author = "Kim, {Jeon Ho} and Yoon, {Soon Gil} and Yeom, {Seung Jin} and Woo, {Hyun Kyung} and Kil, {Deok Sin} and Roh, {Jae Sung} and Sohn, {Hyun Chul}",
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Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 Å on ru metal electrode. / Kim, Jeon Ho; Yoon, Soon Gil; Yeom, Seung Jin; Woo, Hyun Kyung; Kil, Deok Sin; Roh, Jae Sung; Sohn, Hyun Chul.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 6, 04.07.2005, p. F17-F19.

Research output: Contribution to journalArticle

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T1 - Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 Å on ru metal electrode

AU - Kim, Jeon Ho

AU - Yoon, Soon Gil

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AU - Kil, Deok Sin

AU - Roh, Jae Sung

AU - Sohn, Hyun Chul

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AB - HfO3 films with an EOT of 9 Å were deposited at 300°C on Ru/TiN/SiO2/Si substrates using an atomic layer deposition technique and the electrical properties of Ru/HfO2/Ru capacitors were investigated as a function of the film thickness and annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films with a thickness of 7 nm were ∼19, 0.9%, and 8 × 10 -7 A/cm2, respectively. The capacitors show the stable electrical properties in a thermal treatment up to 600°C.

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