Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 Å on ru metal electrode

Jeon Ho Kim, Soon Gil Yoon, Seung Jin Yeom, Hyun Kyung Woo, Deok Sin Kil, Jae Sung Roh, Hyun Chul Sohn

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

HfO3 films with an EOT of 9 Å were deposited at 300°C on Ru/TiN/SiO2/Si substrates using an atomic layer deposition technique and the electrical properties of Ru/HfO2/Ru capacitors were investigated as a function of the film thickness and annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films with a thickness of 7 nm were ∼19, 0.9%, and 8 × 10 -7 A/cm2, respectively. The capacitors show the stable electrical properties in a thermal treatment up to 600°C.

Original languageEnglish
Pages (from-to)F17-F19
JournalElectrochemical and Solid-State Letters
Volume8
Issue number6
DOIs
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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