HfO3 films with an EOT of 9 Å were deposited at 300°C on Ru/TiN/SiO2/Si substrates using an atomic layer deposition technique and the electrical properties of Ru/HfO2/Ru capacitors were investigated as a function of the film thickness and annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films with a thickness of 7 nm were ∼19, 0.9%, and 8 × 10 -7 A/cm2, respectively. The capacitors show the stable electrical properties in a thermal treatment up to 600°C.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering