Electrical properties of AI2O3/La2O 3/AI2O3 films using various tunnel oxide thicknesses for non-volatile memory device applications

Hyo June Kim, Seung Yong Cha, Doo Jin Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The electrical properties (including memory windows and leakage current densities) of Al2O3/La2O3/Al 2O3 (ALA) films equipped with 5 nm, 7.5 nm, and 10 nm tunnel oxide layer were investigated. The dielectric constants of all of the tunnel oxide films using Al2O2 were the same and the equivalent oxide thickness was dependent on film thickness. The optimized conditions were exhibited in the ALA films with a 5 nm tunnel oxide. The memory window of the ALA films using the 5 nm tunnel oxide was about 1.31 V in the program condition (11 V for 10 ms) and in the erase condition (-13 V for 100 ms). Measurement of the leakage current density showed that all of the films are sufficient for use with flash memory device.

Original languageEnglish
Pages (from-to)555-557
Number of pages3
JournalJournal of the Ceramic Society of Japan
Volume117
Issue number1365
DOIs
Publication statusPublished - 2009 Jan 1

Fingerprint

Oxides
tunnels
Tunnels
Electric properties
electrical properties
Data storage equipment
oxides
Leakage currents
leakage
Current density
current density
Flash memory
Oxide films
Film thickness
flash
oxide films
Permittivity
film thickness
permittivity

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

@article{d18b451d6cfa41f8bfb3f68cf2150929,
title = "Electrical properties of AI2O3/La2O 3/AI2O3 films using various tunnel oxide thicknesses for non-volatile memory device applications",
abstract = "The electrical properties (including memory windows and leakage current densities) of Al2O3/La2O3/Al 2O3 (ALA) films equipped with 5 nm, 7.5 nm, and 10 nm tunnel oxide layer were investigated. The dielectric constants of all of the tunnel oxide films using Al2O2 were the same and the equivalent oxide thickness was dependent on film thickness. The optimized conditions were exhibited in the ALA films with a 5 nm tunnel oxide. The memory window of the ALA films using the 5 nm tunnel oxide was about 1.31 V in the program condition (11 V for 10 ms) and in the erase condition (-13 V for 100 ms). Measurement of the leakage current density showed that all of the films are sufficient for use with flash memory device.",
author = "Kim, {Hyo June} and Cha, {Seung Yong} and Choi, {Doo Jin}",
year = "2009",
month = "1",
day = "1",
doi = "10.2109/jcersj2.117.555",
language = "English",
volume = "117",
pages = "555--557",
journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",
issn = "1882-0743",
publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",
number = "1365",

}

Electrical properties of AI2O3/La2O 3/AI2O3 films using various tunnel oxide thicknesses for non-volatile memory device applications. / Kim, Hyo June; Cha, Seung Yong; Choi, Doo Jin.

In: Journal of the Ceramic Society of Japan, Vol. 117, No. 1365, 01.01.2009, p. 555-557.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical properties of AI2O3/La2O 3/AI2O3 films using various tunnel oxide thicknesses for non-volatile memory device applications

AU - Kim, Hyo June

AU - Cha, Seung Yong

AU - Choi, Doo Jin

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The electrical properties (including memory windows and leakage current densities) of Al2O3/La2O3/Al 2O3 (ALA) films equipped with 5 nm, 7.5 nm, and 10 nm tunnel oxide layer were investigated. The dielectric constants of all of the tunnel oxide films using Al2O2 were the same and the equivalent oxide thickness was dependent on film thickness. The optimized conditions were exhibited in the ALA films with a 5 nm tunnel oxide. The memory window of the ALA films using the 5 nm tunnel oxide was about 1.31 V in the program condition (11 V for 10 ms) and in the erase condition (-13 V for 100 ms). Measurement of the leakage current density showed that all of the films are sufficient for use with flash memory device.

AB - The electrical properties (including memory windows and leakage current densities) of Al2O3/La2O3/Al 2O3 (ALA) films equipped with 5 nm, 7.5 nm, and 10 nm tunnel oxide layer were investigated. The dielectric constants of all of the tunnel oxide films using Al2O2 were the same and the equivalent oxide thickness was dependent on film thickness. The optimized conditions were exhibited in the ALA films with a 5 nm tunnel oxide. The memory window of the ALA films using the 5 nm tunnel oxide was about 1.31 V in the program condition (11 V for 10 ms) and in the erase condition (-13 V for 100 ms). Measurement of the leakage current density showed that all of the films are sufficient for use with flash memory device.

UR - http://www.scopus.com/inward/record.url?scp=67649336797&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649336797&partnerID=8YFLogxK

U2 - 10.2109/jcersj2.117.555

DO - 10.2109/jcersj2.117.555

M3 - Article

VL - 117

SP - 555

EP - 557

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

SN - 1882-0743

IS - 1365

ER -