The electrical properties (including memory windows and leakage current densities) of Al2O3/La2O3/Al 2O3 (ALA) films equipped with 5 nm, 7.5 nm, and 10 nm tunnel oxide layer were investigated. The dielectric constants of all of the tunnel oxide films using Al2O2 were the same and the equivalent oxide thickness was dependent on film thickness. The optimized conditions were exhibited in the ALA films with a 5 nm tunnel oxide. The memory window of the ALA films using the 5 nm tunnel oxide was about 1.31 V in the program condition (11 V for 10 ms) and in the erase condition (-13 V for 100 ms). Measurement of the leakage current density showed that all of the films are sufficient for use with flash memory device.
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry