Electrical properties of Al2O3 film deposited at low temperatures

W. H. Ha, M. H. Choo, S. Im

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Amorphous Al2O3 films were deposited on p-Si by rf magnetron sputtering to investigate their potential as a gate dielectric in organic thin film transistors (OTFTs). The deposition was performed at room temperature, 200 and 300 °C using Al2O3 and Al targets. Achieved Al2O3 films have higher capacitance values than thermally grown SiO2 as characterized by capacitance-voltage measurements. It is also found from current-voltage and roughness measurements that the leakage current and the surface roughness can be least when the films are deposited at room temperature. The capacitance of the film obtained from the Al2O3 target appears higher than that of the Al2O3 film from the Al target while the results of electrical breakdown are opposite. These room temperature processes are promising for applications to the gate dielectrics of organic TFTs.

Original languageEnglish
Pages (from-to)78-82
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume303
Issue number1
DOIs
Publication statusPublished - 2002 May 1

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Electric properties
electrical properties
Gate dielectrics
Voltage measurement
capacitance
Capacitance
electrical measurement
Roughness measurement
room temperature
Temperature
Capacitance measurement
Electric current measurement
Amorphous films
Thin film transistors
Leakage currents
Magnetron sputtering
electrical faults
Surface roughness
magnetron sputtering
surface roughness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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Electrical properties of Al2O3 film deposited at low temperatures. / Ha, W. H.; Choo, M. H.; Im, S.

In: Journal of Non-Crystalline Solids, Vol. 303, No. 1, 01.05.2002, p. 78-82.

Research output: Contribution to journalArticle

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