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Electrical properties of Al
2
O
3
film deposited at low temperatures
W. H. Ha, M. H. Choo,
S. Im
Department of Physics
Research output
:
Contribution to journal
›
Article
›
peer-review
43
Citations (Scopus)
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2
O
3
film deposited at low temperatures'. Together they form a unique fingerprint.
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Physics
Room Temperature
50%
Capacitance
50%
Targets
50%
Electric Potential
33%
Dielectrics
33%
Electrical Properties
16%
Surface Roughness
16%
Magnetron Sputtering
16%
Temperature
16%
Utilization
16%
Value
16%
Deposition
16%
Roughness
16%
Material Science
Al2O3
100%
Film
100%
Dielectric Material
33%
Electrical Breakdown
33%
Thin Film Transistor
16%