Abstract
A study was performed on the electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses. The oxide films were deposited on indium-tin-oxide glasses using rf magnetron sputtering at room temperature. It was found by Rutherford backscattering spectrometry, the stoichiometry (x:y) of the AlxOy oxide films approaches up to 2:3.5 when the gas ratio increases.
| Original language | English |
|---|---|
| Pages (from-to) | 953-956 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 21 |
| Issue number | 3 |
| Publication status | Published - 2003 May 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses. / Lee, Jiyoul; Kim, S. S.; Im, Seongil.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 3, 01.05.2003, p. 953-956.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses
AU - Lee, Jiyoul
AU - Kim, S. S.
AU - Im, Seongil
PY - 2003/5/1
Y1 - 2003/5/1
N2 - A study was performed on the electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses. The oxide films were deposited on indium-tin-oxide glasses using rf magnetron sputtering at room temperature. It was found by Rutherford backscattering spectrometry, the stoichiometry (x:y) of the AlxOy oxide films approaches up to 2:3.5 when the gas ratio increases.
AB - A study was performed on the electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses. The oxide films were deposited on indium-tin-oxide glasses using rf magnetron sputtering at room temperature. It was found by Rutherford backscattering spectrometry, the stoichiometry (x:y) of the AlxOy oxide films approaches up to 2:3.5 when the gas ratio increases.
UR - http://www.scopus.com/inward/record.url?scp=0038117845&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038117845&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0038117845
VL - 21
SP - 953
EP - 956
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 3
ER -