Electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses

Jiyoul Lee, S. S. Kim, Seongil Im

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A study was performed on the electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses. The oxide films were deposited on indium-tin-oxide glasses using rf magnetron sputtering at room temperature. It was found by Rutherford backscattering spectrometry, the stoichiometry (x:y) of the AlxOy oxide films approaches up to 2:3.5 when the gas ratio increases.

Original languageEnglish
Pages (from-to)953-956
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number3
Publication statusPublished - 2003 May 1

Fingerprint

ITO glass
indium oxides
tin oxides
Oxide films
oxide films
Electric properties
aluminum oxides
electrical properties
Aluminum
glass
Rutherford backscattering spectroscopy
Stoichiometry
Magnetron sputtering
Spectrometry
stoichiometry
backscattering
magnetron sputtering
room temperature
Gases
gases

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses. / Lee, Jiyoul; Kim, S. S.; Im, Seongil.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 3, 01.05.2003, p. 953-956.

Research output: Contribution to journalArticle

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