Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.
Bibliographical noteFunding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A3B03933785) and under the framework of international cooperation program managed by the National Research Foundation of Korea (NRF-2017K2A9A2A08000214, FY2017). This work was also supported by the Korea Electric Power Corporation. KL acknowledges Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3D1A1070639).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films