Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

Do Hoon Kim, Su Jeong Lee, Sang Hoon Lee, Jae Min Myoung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Flexible multi-channel Si nanowire (NW) field-effect transistors (FETs) were investigated to determine the effect of the number of Si NWs. The Langmuir-Blodgett method was applied for the formation of well-aligned Si NW monolayers, and an ion-gel with a high dielectric constant was used as a gate insulator in a top-gate TFT structure to secure flexibility. Like typical nanoelectronic devices, the drain current changed with the number of Si NWs. However, unlike previous reports, the mobility of the multi-channel Si NW FETs increased from 42.8 to 124.6 cm2 V-1 s-1 as the number of Si NWs was increased from 1 to 58. To verify the feasibility of our approach, the electrical performance of the TFTs fabricated on a flexible polyimide (PI) substrate was analyzed in respect of the bending strain (0.08-1.51%) and bending cycle (up to 12000 cycles). As the number of Si NWs was increased, the trade-off between electrical and mechanical properties during bending tests was confirmed, and the appropriate number of Si NWs was optimized for a flexible FET with excellent performance.

Original languageEnglish
Pages (from-to)6938-6941
Number of pages4
JournalChemical Communications
Volume52
Issue number42
DOIs
Publication statusPublished - 2016 Jan 1

Fingerprint

Field effect transistors
Nanowires
Electric properties
Nanoelectronics
Drain current
Bending tests
Polyimides
Monolayers
Permittivity
Gels
Ions
Mechanical properties
Substrates

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "Flexible multi-channel Si nanowire (NW) field-effect transistors (FETs) were investigated to determine the effect of the number of Si NWs. The Langmuir-Blodgett method was applied for the formation of well-aligned Si NW monolayers, and an ion-gel with a high dielectric constant was used as a gate insulator in a top-gate TFT structure to secure flexibility. Like typical nanoelectronic devices, the drain current changed with the number of Si NWs. However, unlike previous reports, the mobility of the multi-channel Si NW FETs increased from 42.8 to 124.6 cm2 V-1 s-1 as the number of Si NWs was increased from 1 to 58. To verify the feasibility of our approach, the electrical performance of the TFTs fabricated on a flexible polyimide (PI) substrate was analyzed in respect of the bending strain (0.08-1.51{\%}) and bending cycle (up to 12000 cycles). As the number of Si NWs was increased, the trade-off between electrical and mechanical properties during bending tests was confirmed, and the appropriate number of Si NWs was optimized for a flexible FET with excellent performance.",
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Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires. / Kim, Do Hoon; Lee, Su Jeong; Lee, Sang Hoon; Myoung, Jae Min.

In: Chemical Communications, Vol. 52, No. 42, 01.01.2016, p. 6938-6941.

Research output: Contribution to journalArticle

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