Electrical properties of Pd-based ohmic contact to p-GaN

Dae Woo Kim, Jun Cheol Bae, Woo Jin Kim, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

The room-temperature ohmic behavior of palladium-based ohmic contact to p-GaN grown by metallorganic chemical vapor deposition (MOCVD) was investigated. Metal contact systems were deposited and current-voltage measurements were performed to examine room-temperature ohmic behavior. Good ohmic characteristics were shown by palladium-based contacts before annealing. The Schottky barrier height of the Pd/p-GaN was measured to be 0.47 eV.

Original languageEnglish
Pages (from-to)609-614
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number3
DOIs
Publication statusPublished - 2001 May 1
Event13th International Vaccum Microelectronics Conference - Guangzhou, China
Duration: 2000 Aug 142000 Aug 17

Fingerprint

Ohmic contacts
Palladium
palladium
electric contacts
Electric properties
electrical properties
Voltage measurement
Metallorganic chemical vapor deposition
Electric current measurement
room temperature
electrical measurement
vapor deposition
Annealing
Temperature
annealing
Metals
metals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kim, Dae Woo ; Bae, Jun Cheol ; Kim, Woo Jin ; Baik, Hong Koo ; Lee, Sung Man. / Electrical properties of Pd-based ohmic contact to p-GaN. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2001 ; Vol. 19, No. 3. pp. 609-614.
@article{83341a14a6624c2ea0ca9902e13a1194,
title = "Electrical properties of Pd-based ohmic contact to p-GaN",
abstract = "The room-temperature ohmic behavior of palladium-based ohmic contact to p-GaN grown by metallorganic chemical vapor deposition (MOCVD) was investigated. Metal contact systems were deposited and current-voltage measurements were performed to examine room-temperature ohmic behavior. Good ohmic characteristics were shown by palladium-based contacts before annealing. The Schottky barrier height of the Pd/p-GaN was measured to be 0.47 eV.",
author = "Kim, {Dae Woo} and Bae, {Jun Cheol} and Kim, {Woo Jin} and Baik, {Hong Koo} and Lee, {Sung Man}",
year = "2001",
month = "5",
day = "1",
doi = "10.1116/1.1372922",
language = "English",
volume = "19",
pages = "609--614",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
number = "3",

}

Electrical properties of Pd-based ohmic contact to p-GaN. / Kim, Dae Woo; Bae, Jun Cheol; Kim, Woo Jin; Baik, Hong Koo; Lee, Sung Man.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 3, 01.05.2001, p. 609-614.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electrical properties of Pd-based ohmic contact to p-GaN

AU - Kim, Dae Woo

AU - Bae, Jun Cheol

AU - Kim, Woo Jin

AU - Baik, Hong Koo

AU - Lee, Sung Man

PY - 2001/5/1

Y1 - 2001/5/1

N2 - The room-temperature ohmic behavior of palladium-based ohmic contact to p-GaN grown by metallorganic chemical vapor deposition (MOCVD) was investigated. Metal contact systems were deposited and current-voltage measurements were performed to examine room-temperature ohmic behavior. Good ohmic characteristics were shown by palladium-based contacts before annealing. The Schottky barrier height of the Pd/p-GaN was measured to be 0.47 eV.

AB - The room-temperature ohmic behavior of palladium-based ohmic contact to p-GaN grown by metallorganic chemical vapor deposition (MOCVD) was investigated. Metal contact systems were deposited and current-voltage measurements were performed to examine room-temperature ohmic behavior. Good ohmic characteristics were shown by palladium-based contacts before annealing. The Schottky barrier height of the Pd/p-GaN was measured to be 0.47 eV.

UR - http://www.scopus.com/inward/record.url?scp=0035326264&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035326264&partnerID=8YFLogxK

U2 - 10.1116/1.1372922

DO - 10.1116/1.1372922

M3 - Conference article

AN - SCOPUS:0035326264

VL - 19

SP - 609

EP - 614

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 3

ER -