Electrical properties of PZT thin films by photochemical deposition

Hyeong Ho Park, Sook Yoon, Hyung-Ho Park, Ross H. Hill

Research output: Contribution to journalConference article

23 Citations (Scopus)

Abstract

The electrical properties of lead zirconate titanate (PZT) thin film prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors were characterized. Unlike sol-gel procedure based on the chemical reaction including hydrolysis and condensation, by PMOD, metallic state is obtained through the removal of organic ligand by exposure to UV. This metallic state usually turns to oxide state through oxidation reaction with atmospheric oxygen during exposure to UV. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic group was possibly obtained by exposure of spin-coated PZT precursor film to UV at room temperature. After anneal treatment of the UV-exposed PZT precursor film to crystallize, a highly preferred growth orientation was found in PZT film according to the orientation of substrate Pt. The characteristics of ferroelectric properties (remnant polarization and coercive field) and leakage current behavior were almost the same as those of conventional PZT film prepared by sol-gel processing. However, a slight shift of hysteresis curve and more leaky behavior with negative direction of bias were found and it seemed to be due to the presence of micro-defects formed during PMOD reaction.

Original languageEnglish
Pages (from-to)669-673
Number of pages5
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Fingerprint

Electric properties
electrical properties
Thin films
thin films
Metals
Sol-gels
gels
metals
Leakage currents
Ferroelectric materials
Hysteresis
Chemical reactions
Condensation
Hydrolysis
Fourier transforms
Oxides
Ligands
hydrolysis
Polarization
Infrared radiation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Park, Hyeong Ho ; Yoon, Sook ; Park, Hyung-Ho ; Hill, Ross H. / Electrical properties of PZT thin films by photochemical deposition. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 669-673.
@article{470c1b6d486c40228329cb94487540ba,
title = "Electrical properties of PZT thin films by photochemical deposition",
abstract = "The electrical properties of lead zirconate titanate (PZT) thin film prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors were characterized. Unlike sol-gel procedure based on the chemical reaction including hydrolysis and condensation, by PMOD, metallic state is obtained through the removal of organic ligand by exposure to UV. This metallic state usually turns to oxide state through oxidation reaction with atmospheric oxygen during exposure to UV. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic group was possibly obtained by exposure of spin-coated PZT precursor film to UV at room temperature. After anneal treatment of the UV-exposed PZT precursor film to crystallize, a highly preferred growth orientation was found in PZT film according to the orientation of substrate Pt. The characteristics of ferroelectric properties (remnant polarization and coercive field) and leakage current behavior were almost the same as those of conventional PZT film prepared by sol-gel processing. However, a slight shift of hysteresis curve and more leaky behavior with negative direction of bias were found and it seemed to be due to the presence of micro-defects formed during PMOD reaction.",
author = "Park, {Hyeong Ho} and Sook Yoon and Hyung-Ho Park and Hill, {Ross H.}",
year = "2004",
month = "1",
day = "30",
doi = "10.1016/j.tsf.2003.09.005",
language = "English",
volume = "447-448",
pages = "669--673",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Electrical properties of PZT thin films by photochemical deposition. / Park, Hyeong Ho; Yoon, Sook; Park, Hyung-Ho; Hill, Ross H.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 669-673.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electrical properties of PZT thin films by photochemical deposition

AU - Park, Hyeong Ho

AU - Yoon, Sook

AU - Park, Hyung-Ho

AU - Hill, Ross H.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - The electrical properties of lead zirconate titanate (PZT) thin film prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors were characterized. Unlike sol-gel procedure based on the chemical reaction including hydrolysis and condensation, by PMOD, metallic state is obtained through the removal of organic ligand by exposure to UV. This metallic state usually turns to oxide state through oxidation reaction with atmospheric oxygen during exposure to UV. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic group was possibly obtained by exposure of spin-coated PZT precursor film to UV at room temperature. After anneal treatment of the UV-exposed PZT precursor film to crystallize, a highly preferred growth orientation was found in PZT film according to the orientation of substrate Pt. The characteristics of ferroelectric properties (remnant polarization and coercive field) and leakage current behavior were almost the same as those of conventional PZT film prepared by sol-gel processing. However, a slight shift of hysteresis curve and more leaky behavior with negative direction of bias were found and it seemed to be due to the presence of micro-defects formed during PMOD reaction.

AB - The electrical properties of lead zirconate titanate (PZT) thin film prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors were characterized. Unlike sol-gel procedure based on the chemical reaction including hydrolysis and condensation, by PMOD, metallic state is obtained through the removal of organic ligand by exposure to UV. This metallic state usually turns to oxide state through oxidation reaction with atmospheric oxygen during exposure to UV. Fourier transform infra-red spectroscopic observation showed that a complete removal of organic group was possibly obtained by exposure of spin-coated PZT precursor film to UV at room temperature. After anneal treatment of the UV-exposed PZT precursor film to crystallize, a highly preferred growth orientation was found in PZT film according to the orientation of substrate Pt. The characteristics of ferroelectric properties (remnant polarization and coercive field) and leakage current behavior were almost the same as those of conventional PZT film prepared by sol-gel processing. However, a slight shift of hysteresis curve and more leaky behavior with negative direction of bias were found and it seemed to be due to the presence of micro-defects formed during PMOD reaction.

UR - http://www.scopus.com/inward/record.url?scp=1342281243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1342281243&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.09.005

DO - 10.1016/j.tsf.2003.09.005

M3 - Conference article

AN - SCOPUS:1342281243

VL - 447-448

SP - 669

EP - 673

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -