Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP

Chandreswar Mahata, Youngseo An, Sungho Choi, Young Chul Byun, Dae Kyoung Kim, Taeyoon Lee, Jiyoung Kim, Mann-Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

For possible application to a gate dielectric in high-performance III-V transistors, nanolaminated HfO2-Al2O3 films with artificial compositional profiles were deposited on n-type InP substrates using atomic layer deposition. The films were vertically graded (HfO2 and Al2O3 at the surface and interface regions, respectively) and had a homogeneous composition. To compare their electrical properties, a similar physical thickness and capacitance-equivalent thickness (CET) were maintained, and the graded structure showed an increase in the Al2O3 content near the high-k and InP interface region without an increase in CET, which suppresses the In incorporation at the near-interface region and reduces the density of the interface trap. However, doing so results in a degradation of the leakage current characteristics under voltage stressing when compared to homogeneously-nanolaminated films.

Original languageEnglish
Pages (from-to)294-299
Number of pages6
JournalCurrent Applied Physics
Volume16
Issue number3
DOIs
Publication statusPublished - 2016 Mar 1

Fingerprint

Electric properties
electrical properties
Capacitance
Chemical analysis
Atomic layer deposition
capacitance
Gate dielectrics
Leakage currents
Transistors
atomic layer epitaxy
Degradation
leakage
transistors
traps
Electric potential
Substrates
degradation
electric potential
profiles

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Mahata, Chandreswar ; An, Youngseo ; Choi, Sungho ; Byun, Young Chul ; Kim, Dae Kyoung ; Lee, Taeyoon ; Kim, Jiyoung ; Cho, Mann-Ho ; Kim, Hyoungsub. / Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP. In: Current Applied Physics. 2016 ; Vol. 16, No. 3. pp. 294-299.
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Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP. / Mahata, Chandreswar; An, Youngseo; Choi, Sungho; Byun, Young Chul; Kim, Dae Kyoung; Lee, Taeyoon; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub.

In: Current Applied Physics, Vol. 16, No. 3, 01.03.2016, p. 294-299.

Research output: Contribution to journalArticle

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AU - Kim, Dae Kyoung

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