Electrical properties of the HfO2-Al2O3 nanolaminates with homogeneous and graded compositions on InP

Chandreswar Mahata, Youngseo An, Sungho Choi, Young Chul Byun, Dae Kyoung Kim, Taeyoon Lee, Jiyoung Kim, Mann Ho Cho, Hyoungsub Kim

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2 Citations (Scopus)

Abstract

For possible application to a gate dielectric in high-performance III-V transistors, nanolaminated HfO2-Al2O3 films with artificial compositional profiles were deposited on n-type InP substrates using atomic layer deposition. The films were vertically graded (HfO2 and Al2O3 at the surface and interface regions, respectively) and had a homogeneous composition. To compare their electrical properties, a similar physical thickness and capacitance-equivalent thickness (CET) were maintained, and the graded structure showed an increase in the Al2O3 content near the high-k and InP interface region without an increase in CET, which suppresses the In incorporation at the near-interface region and reduces the density of the interface trap. However, doing so results in a degradation of the leakage current characteristics under voltage stressing when compared to homogeneously-nanolaminated films.

Original languageEnglish
Pages (from-to)294-299
Number of pages6
JournalCurrent Applied Physics
Volume16
Issue number3
DOIs
Publication statusPublished - 2016 Mar

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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