Electrical properties of the Ta-RuO2 diffusion barrier for high-density memory devices

Dong Soo Yoon, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The electrical properties of a Ta layer prepared with and without RuO2 addition were investigated. The Ta+RuO2/TiSi2/poly-Si/SiO2/Si contact system exhibited lower total resistance and ohmic characteristics up to 800 °C. Meanwhile, the Ta/TiSi2/poly-Si/SiO2/Si contact system showed higher total resistance and nonohmic behavior after annealing at 650 °C, attributed to the oxidation of both Ta and TiSi2 layers. In the former case, a Ta+RuO2 diffusion barrier showed an amorphous Ta microstructure and embedded RuOx nanocrystals in the as-deposited state. The conductive RuO2 crystalline phase in the Ta+RuO2 film was formed by reaction between the nanocrystalline RuOx and oxygen indiffused from air during annealing. When the Ta layer was deposited with RuO2 addition, therefore, both the electrical properties and the oxidation resistance of the Ta+RuO2 diffusion barrier were better than those of TiN, TaN, and Ta-Si-N barriers.

Original languageEnglish
Pages (from-to)949-951
Number of pages3
JournalJournal of the American Ceramic Society
Volume83
Issue number4
Publication statusPublished - 2000 Jan 1

Fingerprint

Diffusion barriers
electrical property
Polysilicon
Electric properties
Annealing
annealing
Data storage equipment
Oxidation resistance
Nanocrystals
oxidation
Oxygen
Crystalline materials
Oxidation
Microstructure
microstructure
Air
oxygen
air

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry

Cite this

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abstract = "The electrical properties of a Ta layer prepared with and without RuO2 addition were investigated. The Ta+RuO2/TiSi2/poly-Si/SiO2/Si contact system exhibited lower total resistance and ohmic characteristics up to 800 °C. Meanwhile, the Ta/TiSi2/poly-Si/SiO2/Si contact system showed higher total resistance and nonohmic behavior after annealing at 650 °C, attributed to the oxidation of both Ta and TiSi2 layers. In the former case, a Ta+RuO2 diffusion barrier showed an amorphous Ta microstructure and embedded RuOx nanocrystals in the as-deposited state. The conductive RuO2 crystalline phase in the Ta+RuO2 film was formed by reaction between the nanocrystalline RuOx and oxygen indiffused from air during annealing. When the Ta layer was deposited with RuO2 addition, therefore, both the electrical properties and the oxidation resistance of the Ta+RuO2 diffusion barrier were better than those of TiN, TaN, and Ta-Si-N barriers.",
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Electrical properties of the Ta-RuO2 diffusion barrier for high-density memory devices. / Yoon, Dong Soo; Baik, Hong Koo; Lee, Sung Man.

In: Journal of the American Ceramic Society, Vol. 83, No. 4, 01.01.2000, p. 949-951.

Research output: Contribution to journalArticle

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AU - Yoon, Dong Soo

AU - Baik, Hong Koo

AU - Lee, Sung Man

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N2 - The electrical properties of a Ta layer prepared with and without RuO2 addition were investigated. The Ta+RuO2/TiSi2/poly-Si/SiO2/Si contact system exhibited lower total resistance and ohmic characteristics up to 800 °C. Meanwhile, the Ta/TiSi2/poly-Si/SiO2/Si contact system showed higher total resistance and nonohmic behavior after annealing at 650 °C, attributed to the oxidation of both Ta and TiSi2 layers. In the former case, a Ta+RuO2 diffusion barrier showed an amorphous Ta microstructure and embedded RuOx nanocrystals in the as-deposited state. The conductive RuO2 crystalline phase in the Ta+RuO2 film was formed by reaction between the nanocrystalline RuOx and oxygen indiffused from air during annealing. When the Ta layer was deposited with RuO2 addition, therefore, both the electrical properties and the oxidation resistance of the Ta+RuO2 diffusion barrier were better than those of TiN, TaN, and Ta-Si-N barriers.

AB - The electrical properties of a Ta layer prepared with and without RuO2 addition were investigated. The Ta+RuO2/TiSi2/poly-Si/SiO2/Si contact system exhibited lower total resistance and ohmic characteristics up to 800 °C. Meanwhile, the Ta/TiSi2/poly-Si/SiO2/Si contact system showed higher total resistance and nonohmic behavior after annealing at 650 °C, attributed to the oxidation of both Ta and TiSi2 layers. In the former case, a Ta+RuO2 diffusion barrier showed an amorphous Ta microstructure and embedded RuOx nanocrystals in the as-deposited state. The conductive RuO2 crystalline phase in the Ta+RuO2 film was formed by reaction between the nanocrystalline RuOx and oxygen indiffused from air during annealing. When the Ta layer was deposited with RuO2 addition, therefore, both the electrical properties and the oxidation resistance of the Ta+RuO2 diffusion barrier were better than those of TiN, TaN, and Ta-Si-N barriers.

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