Electrical properties of yttrium-indium-zinc-oxide thin film transistors fabricated using the sol-gel process and various yttrium compositions

Hyun Soo Shin, Gun Hee Kim, Woong Hee Jeong, Byung Du Ahn, Hyun Jae Kim

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This study was the first to investigate the fabrication of yttrium-indium-zinc-oxide (YIZO) thin film transistors (TFTs) using the sol-gel process. YIZO thin films were made using various yttrium (Y) compositions from 10 to 20%. Thermogravimetry and differential scanning calorimetry (TG- DSC) data from the 15% Y sample revealed that the YIZO thin films crystallized above the temperature of 535 °C, much hotter than that of indium- gallium-zinc-oxide (IGZO) thin films. The best performance of YIZO TFTs was observed with a 15% ratio of Y to Zn: this yielded a saturation mobility of 1.12 cm2 V-1 s-1, an on/off ratio of 4:61 × 105, a threshold voltage of 0.54 V, and a subthreshold swing of 1.03 V/decade. This study also assessed the post-annealing temperature dependence of YIZO TFTs. The findings demonstrated the possibility of using Y to replace gallium (Ga), which has been used in previously reported solution-processed IGZO TFTs.

Original languageEnglish
JournalJapanese journal of applied physics
Issue number3 PART 2
Publication statusPublished - 2010 Mar 1


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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