Atomic layer deposition (ALD) process for oxynitrides of high- k gate dielectrics employing N H4 OH as a single source for reactants, water and N H3, was studied. By this method, nitrogen was incorporated up to 1-3 at. % for ALD Al2 O3 and Ta2 O5 films from metal organic precursors. A comparative study with water based ALD showed that the electrical properties were improved. The leakage current of oxide films from N H4 OH based ALD had been reduced and, more importantly, the dielectric strength was found to be enhanced by more than two orders of magnitude from a time dependent dielectric breakdown measurement.
Bibliographical noteFunding Information:
This work was supported by Korea Research Foundation grants funded by the Korean government (MOEHRD, Grant No. KRF-2005-003-D00144; Basic Research Promotion Fund, Grant No. KRF-2006-311-D00114).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)