Electrical property improvements of high- k gate oxide by in situ nitrogen incorporation during atomic layer deposition

W. J. Maeng, S. J. Lim, Soon Ju Kwon, H. Kim

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Atomic layer deposition (ALD) process for oxynitrides of high- k gate dielectrics employing N H4 OH as a single source for reactants, water and N H3, was studied. By this method, nitrogen was incorporated up to 1-3 at. % for ALD Al2 O3 and Ta2 O5 films from metal organic precursors. A comparative study with water based ALD showed that the electrical properties were improved. The leakage current of oxide films from N H4 OH based ALD had been reduced and, more importantly, the dielectric strength was found to be enhanced by more than two orders of magnitude from a time dependent dielectric breakdown measurement.

Original languageEnglish
Article number062909
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2007 Feb 19


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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