Electrical property improvements of high- k gate oxide by in situ nitrogen incorporation during atomic layer deposition

W. J. Maeng, S. J. Lim, Soon Ju Kwon, H. Kim

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Electrical property improvements of high- k gate oxide by in situ nitrogen incorporation during atomic layer deposition'. Together they form a unique fingerprint.

Physics & Astronomy