Electrical responses of artificial DNA nanostructures on solution-processed in-Ga-Zn-O thin-film transistors with multistacked active layers

Joohye Jung, Si Joon Kim, Doo Hyun Yoon, Byeonghoon Kim, Sung Ha Park, Hyun Jae Kim

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use of multistacked active layers. Our IGZO TFT had a turn-on voltage (Von) of -0.8 V and a subthreshold swing (SS) value of 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the IGZO surface, after which an anomalous hump effect accompanying a significant decrease in Von (-13.6 V) and degradation of SS (1.29 V/decade) was observed. This sensing behavior was attributed to the middle interfaces of the multistacked active layers and the negatively charged phosphate groups on the DNA backbone, which generated a parasitic path in the TFT device. These results compared favorably with those reported for conventional field-effect transistor-based DNA sensors with remarkable sensitivity and stability.

Original languageEnglish
Pages (from-to)98-102
Number of pages5
JournalACS Applied Materials and Interfaces
Volume5
Issue number1
DOIs
Publication statusPublished - 2013 Jan 9

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Thin film transistors
Nanostructures
DNA
Field effect transistors
Phosphates
Degradation
Sensors
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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abstract = "We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use of multistacked active layers. Our IGZO TFT had a turn-on voltage (Von) of -0.8 V and a subthreshold swing (SS) value of 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the IGZO surface, after which an anomalous hump effect accompanying a significant decrease in Von (-13.6 V) and degradation of SS (1.29 V/decade) was observed. This sensing behavior was attributed to the middle interfaces of the multistacked active layers and the negatively charged phosphate groups on the DNA backbone, which generated a parasitic path in the TFT device. These results compared favorably with those reported for conventional field-effect transistor-based DNA sensors with remarkable sensitivity and stability.",
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Electrical responses of artificial DNA nanostructures on solution-processed in-Ga-Zn-O thin-film transistors with multistacked active layers. / Jung, Joohye; Kim, Si Joon; Yoon, Doo Hyun; Kim, Byeonghoon; Park, Sung Ha; Kim, Hyun Jae.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 1, 09.01.2013, p. 98-102.

Research output: Contribution to journalArticle

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