Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes

Moon Ho Ham, Sukho Yoon, Yongjo Park, Lifeng Bian, Manfred Ramsteiner, Jae Min Myoung

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We present the electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes. The electroluminescence spectra from the spin LED indicate the existence of the spin polarization via optical polarization of emitted light up to room temperature. This demonstrates that the spin injection from the (Ga, Mn)N layer into (In, Ga)N quantum wells was achieved persisting up to room temperature by comparing it with the magnetic field dependence of the Hall resistance, which is proportional to the out-of-plane magnetization. These results support that (Ga, Mn)N is an appropriate material for a spin injection source in room-temperature operating semiconductor spintronic devices.

Original languageEnglish
Article number017
Pages (from-to)7703-7708
Number of pages6
JournalJournal of Physics Condensed Matter
Volume18
Issue number32
DOIs
Publication statusPublished - 2006 Aug 16

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Light polarization
Nitrides
polarized light
nitrides
Light emitting diodes
light emitting diodes
injection
room temperature
Temperature
Magnetoelectronics
Spin polarization
Electroluminescence
Semiconductor quantum wells
Magnetization
Hall resistance
optical polarization
Semiconductor materials
Magnetic fields
semiconductor devices
electroluminescence

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Ham, Moon Ho ; Yoon, Sukho ; Park, Yongjo ; Bian, Lifeng ; Ramsteiner, Manfred ; Myoung, Jae Min. / Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes. In: Journal of Physics Condensed Matter. 2006 ; Vol. 18, No. 32. pp. 7703-7708.
@article{ce34f389af8a4bba94e45f10a6fb5862,
title = "Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes",
abstract = "We present the electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes. The electroluminescence spectra from the spin LED indicate the existence of the spin polarization via optical polarization of emitted light up to room temperature. This demonstrates that the spin injection from the (Ga, Mn)N layer into (In, Ga)N quantum wells was achieved persisting up to room temperature by comparing it with the magnetic field dependence of the Hall resistance, which is proportional to the out-of-plane magnetization. These results support that (Ga, Mn)N is an appropriate material for a spin injection source in room-temperature operating semiconductor spintronic devices.",
author = "Ham, {Moon Ho} and Sukho Yoon and Yongjo Park and Lifeng Bian and Manfred Ramsteiner and Myoung, {Jae Min}",
year = "2006",
month = "8",
day = "16",
doi = "10.1088/0953-8984/18/32/017",
language = "English",
volume = "18",
pages = "7703--7708",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "32",

}

Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes. / Ham, Moon Ho; Yoon, Sukho; Park, Yongjo; Bian, Lifeng; Ramsteiner, Manfred; Myoung, Jae Min.

In: Journal of Physics Condensed Matter, Vol. 18, No. 32, 017, 16.08.2006, p. 7703-7708.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes

AU - Ham, Moon Ho

AU - Yoon, Sukho

AU - Park, Yongjo

AU - Bian, Lifeng

AU - Ramsteiner, Manfred

AU - Myoung, Jae Min

PY - 2006/8/16

Y1 - 2006/8/16

N2 - We present the electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes. The electroluminescence spectra from the spin LED indicate the existence of the spin polarization via optical polarization of emitted light up to room temperature. This demonstrates that the spin injection from the (Ga, Mn)N layer into (In, Ga)N quantum wells was achieved persisting up to room temperature by comparing it with the magnetic field dependence of the Hall resistance, which is proportional to the out-of-plane magnetization. These results support that (Ga, Mn)N is an appropriate material for a spin injection source in room-temperature operating semiconductor spintronic devices.

AB - We present the electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes. The electroluminescence spectra from the spin LED indicate the existence of the spin polarization via optical polarization of emitted light up to room temperature. This demonstrates that the spin injection from the (Ga, Mn)N layer into (In, Ga)N quantum wells was achieved persisting up to room temperature by comparing it with the magnetic field dependence of the Hall resistance, which is proportional to the out-of-plane magnetization. These results support that (Ga, Mn)N is an appropriate material for a spin injection source in room-temperature operating semiconductor spintronic devices.

UR - http://www.scopus.com/inward/record.url?scp=33746690661&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746690661&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/18/32/017

DO - 10.1088/0953-8984/18/32/017

M3 - Article

C2 - 21690881

AN - SCOPUS:33746690661

VL - 18

SP - 7703

EP - 7708

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 32

M1 - 017

ER -