Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes

Moon Ho Ham, Sukho Yoon, Yongjo Park, Lifeng Bian, Manfred Ramsteiner, Jae Min Myoung

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19 Citations (Scopus)

Abstract

We present the electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes. The electroluminescence spectra from the spin LED indicate the existence of the spin polarization via optical polarization of emitted light up to room temperature. This demonstrates that the spin injection from the (Ga, Mn)N layer into (In, Ga)N quantum wells was achieved persisting up to room temperature by comparing it with the magnetic field dependence of the Hall resistance, which is proportional to the out-of-plane magnetization. These results support that (Ga, Mn)N is an appropriate material for a spin injection source in room-temperature operating semiconductor spintronic devices.

Original languageEnglish
Article number017
Pages (from-to)7703-7708
Number of pages6
JournalJournal of Physics Condensed Matter
Volume18
Issue number32
DOIs
Publication statusPublished - 2006 Aug 16

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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