We examined electrical spin transport in cylindrical silicon nanowires (Si NWs) using the lateral nonlocal spin-valve (NLSV) geometry with CoFeB/MgO contacts. The use of a thin MgO layer as the tunnel barrier in the NLSV devices provided an optimum resistance-area product for spin transport measurements in the Si NWs. A robust NLSV spin signal of over 3.95 kΩ and clear minor loops were observed at 1.8 K in the Si NWs heavily doped with phosphorous. Furthermore, the NLSV magnetoresistance was strongly influenced by the local magnetizations resulting from the ferromagnetic (FM) electrodes being attached to the cylindrically shaped Si NW, with these magnetizations differing from those of bulk ferromagnets. These local micro-magnetic configurations of the FM electrodes led to intriguing NLSV spin signals associated with the Hanle effect. Our study of spin transport in the heavily doped Si NWs provides a sound basis for developing applications of nanoscale semiconductor spintronic devices.
|Journal||Applied Physics Letters|
|Publication status||Published - 2017 Aug 7|
Bibliographical noteFunding Information:
This work was supported by the KIST Institutional Program (2E27140) and the National Research Council of Science & Technology (NST) grant (No. CAP-16-01-KIST) by the Korea Government (MSIP). H.-J. Choi acknowledges the support of National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1A2B3011586).
© 2017 Author(s).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)