Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts

Tae Eon Park; Byoung Chul Min; Hee Gyum Park; Jaejun Lee; Moon Ho Jo; Chaun Jang; Hyun Cheol Koo; Heon Jin Choi; Joonyeon Chang

doi:10.1063/1.4998587

Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts

Tae Eon Park, Byoung Chul Min, Hee Gyum Park, Jaejun Lee, Moon Ho Jo, Chaun Jang, Hyun Cheol Koo, Heon Jin Choi, Joonyeon Chang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We examined electrical spin transport in cylindrical silicon nanowires (Si NWs) using the lateral nonlocal spin-valve (NLSV) geometry with CoFeB/MgO contacts. The use of a thin MgO layer as the tunnel barrier in the NLSV devices provided an optimum resistance-area product for spin transport measurements in the Si NWs. A robust NLSV spin signal of over 3.95 kΩ and clear minor loops were observed at 1.8 K in the Si NWs heavily doped with phosphorous. Furthermore, the NLSV magnetoresistance was strongly influenced by the local magnetizations resulting from the ferromagnetic (FM) electrodes being attached to the cylindrically shaped Si NW, with these magnetizations differing from those of bulk ferromagnets. These local micro-magnetic configurations of the FM electrodes led to intriguing NLSV spin signals associated with the Hanle effect. Our study of spin transport in the heavily doped Si NWs provides a sound basis for developing applications of nanoscale semiconductor spintronic devices.

Original language	English
Article number	062402
Journal	Applied Physics Letters
Volume	111
Issue number	6
DOIs	https://doi.org/10.1063/1.4998587
Publication status	Published - 2017 Aug 7

Bibliographical note

Funding Information:
This work was supported by the KIST Institutional Program (2E27140) and the National Research Council of Science & Technology (NST) grant (No. CAP-16-01-KIST) by the Korea Government (MSIP). H.-J. Choi acknowledges the support of National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1A2B3011586).

Publisher Copyright:
© 2017 Author(s).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4998587

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title = "Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts",

abstract = "We examined electrical spin transport in cylindrical silicon nanowires (Si NWs) using the lateral nonlocal spin-valve (NLSV) geometry with CoFeB/MgO contacts. The use of a thin MgO layer as the tunnel barrier in the NLSV devices provided an optimum resistance-area product for spin transport measurements in the Si NWs. A robust NLSV spin signal of over 3.95 kΩ and clear minor loops were observed at 1.8 K in the Si NWs heavily doped with phosphorous. Furthermore, the NLSV magnetoresistance was strongly influenced by the local magnetizations resulting from the ferromagnetic (FM) electrodes being attached to the cylindrically shaped Si NW, with these magnetizations differing from those of bulk ferromagnets. These local micro-magnetic configurations of the FM electrodes led to intriguing NLSV spin signals associated with the Hanle effect. Our study of spin transport in the heavily doped Si NWs provides a sound basis for developing applications of nanoscale semiconductor spintronic devices.",

author = "Park, {Tae Eon} and Min, {Byoung Chul} and Park, {Hee Gyum} and Jaejun Lee and Jo, {Moon Ho} and Chaun Jang and Koo, {Hyun Cheol} and Choi, {Heon Jin} and Joonyeon Chang",

note = "Funding Information: This work was supported by the KIST Institutional Program (2E27140) and the National Research Council of Science & Technology (NST) grant (No. CAP-16-01-KIST) by the Korea Government (MSIP). H.-J. Choi acknowledges the support of National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1A2B3011586). Publisher Copyright: {\textcopyright} 2017 Author(s).",

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doi = "10.1063/1.4998587",

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AU - Park, Tae Eon

AU - Min, Byoung Chul

AU - Park, Hee Gyum

AU - Lee, Jaejun

AU - Jo, Moon Ho

AU - Jang, Chaun

AU - Koo, Hyun Cheol

AU - Choi, Heon Jin

AU - Chang, Joonyeon

N1 - Funding Information: This work was supported by the KIST Institutional Program (2E27140) and the National Research Council of Science & Technology (NST) grant (No. CAP-16-01-KIST) by the Korea Government (MSIP). H.-J. Choi acknowledges the support of National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1A2B3011586). Publisher Copyright: © 2017 Author(s).

PY - 2017/8/7

Y1 - 2017/8/7

N2 - We examined electrical spin transport in cylindrical silicon nanowires (Si NWs) using the lateral nonlocal spin-valve (NLSV) geometry with CoFeB/MgO contacts. The use of a thin MgO layer as the tunnel barrier in the NLSV devices provided an optimum resistance-area product for spin transport measurements in the Si NWs. A robust NLSV spin signal of over 3.95 kΩ and clear minor loops were observed at 1.8 K in the Si NWs heavily doped with phosphorous. Furthermore, the NLSV magnetoresistance was strongly influenced by the local magnetizations resulting from the ferromagnetic (FM) electrodes being attached to the cylindrically shaped Si NW, with these magnetizations differing from those of bulk ferromagnets. These local micro-magnetic configurations of the FM electrodes led to intriguing NLSV spin signals associated with the Hanle effect. Our study of spin transport in the heavily doped Si NWs provides a sound basis for developing applications of nanoscale semiconductor spintronic devices.

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Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts

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