Electrical Stability Enhancement of GeInGaO Thin-Film Transistors by Solution-Processed Li Doped Yttrium Oxide Passivation

Uy Hyun Choi, Seokhyun Yoon, Doo Hyun Yoon, Young Jun Tak, Yeong Gyu Kim, Byung Du Ahn, Jin Seong Park, Heon Je Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)
Original languageEnglish
JournalJournal Physics D: Applied Physics
Volume49
Issue number28
Publication statusPublished - 2016 Jun

Cite this

Choi, Uy Hyun ; Yoon, Seokhyun ; Yoon, Doo Hyun ; Tak, Young Jun ; Kim, Yeong Gyu ; Ahn, Byung Du ; Park, Jin Seong ; Kim, Heon Je. / Electrical Stability Enhancement of GeInGaO Thin-Film Transistors by Solution-Processed Li Doped Yttrium Oxide Passivation. In: Journal Physics D: Applied Physics. 2016 ; Vol. 49, No. 28.
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Electrical Stability Enhancement of GeInGaO Thin-Film Transistors by Solution-Processed Li Doped Yttrium Oxide Passivation. / Choi, Uy Hyun; Yoon, Seokhyun; Yoon, Doo Hyun; Tak, Young Jun; Kim, Yeong Gyu; Ahn, Byung Du; Park, Jin Seong; Kim, Heon Je.

In: Journal Physics D: Applied Physics, Vol. 49, No. 28, 06.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical Stability Enhancement of GeInGaO Thin-Film Transistors by Solution-Processed Li Doped Yttrium Oxide Passivation

AU - Choi, Uy Hyun

AU - Yoon, Seokhyun

AU - Yoon, Doo Hyun

AU - Tak, Young Jun

AU - Kim, Yeong Gyu

AU - Ahn, Byung Du

AU - Park, Jin Seong

AU - Kim, Heon Je

PY - 2016/6

Y1 - 2016/6

M3 - Article

VL - 49

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 28

ER -