Electrical Stability Enhancement of GeInGaO Thin-Film Transistors by Solution-Processed Li Doped Yttrium Oxide Passivation

Uy Hyun Choi; Seokhyun Yoon; Doo Hyun Yoon; Young Jun Tak; Yeong Gyu Kim; Byung Du Ahn; Jin Seong Park; Heon Je Kim

Electrical Stability Enhancement of GeInGaO Thin-Film Transistors by Solution-Processed Li Doped Yttrium Oxide Passivation

Uy Hyun Choi, Seokhyun Yoon, Doo Hyun Yoon, Young Jun Tak, Yeong Gyu Kim, Byung Du Ahn, Jin Seong Park, Heon Je Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Journal Physics D: Applied Physics
Volume	49
Issue number	28
Publication status	Published - 2016 Jun

Cite this

@article{fab58cc51f294a51aec108c9c48bf2c8,

title = "Electrical Stability Enhancement of GeInGaO Thin-Film Transistors by Solution-Processed Li Doped Yttrium Oxide Passivation",

author = "Choi, {Uy Hyun} and Seokhyun Yoon and Yoon, {Doo Hyun} and Tak, {Young Jun} and Kim, {Yeong Gyu} and Ahn, {Byung Du} and Park, {Jin Seong} and Kim, {Heon Je}",

year = "2016",

month = jun,

language = "English",

volume = "49",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "28",

}

TY - JOUR

T1 - Electrical Stability Enhancement of GeInGaO Thin-Film Transistors by Solution-Processed Li Doped Yttrium Oxide Passivation

AU - Choi, Uy Hyun

AU - Yoon, Seokhyun

AU - Yoon, Doo Hyun

AU - Tak, Young Jun

AU - Kim, Yeong Gyu

AU - Ahn, Byung Du

AU - Park, Jin Seong

AU - Kim, Heon Je

PY - 2016/6

Y1 - 2016/6

M3 - Article

SN - 0022-3727

VL - 49

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 28

ER -