TY - JOUR
T1 - Electrical stability of multilayer MoS2 field-effect transistor under negative bias stress at various temperatures
AU - Yang, Suk
AU - Park, Solah
AU - Jang, Sukjin
AU - Kim, Hojoong
AU - Kwon, Jang Yeon
PY - 2014/8
Y1 - 2014/8
N2 - The electrical stability of molybdenum disulfide (MoS2) transistors is crucial for their use in various applications. However, it is tricky to evaluate the inherent stability of MoS2 transistors because it is highly dependent on environmental conditions during measurement such as humidity, light, and electrical factors. We studied the threshold voltage instability under negative bias stress at a variety of temperatures in a vacuum and in the dark to eliminate any environmental effects. In particular, the measurement of transfer curves under stress is minimized in order to study the inherent instability of MoS2 transistors, even though the measurement of transfer curves is normally indispensable to check for the evolution of electrical instability. MoS2 transistors have high average effective energy when compared to conventional amorphous Si and oxide semiconductor transistors, which allows for adequate operation at high temperatures. (
AB - The electrical stability of molybdenum disulfide (MoS2) transistors is crucial for their use in various applications. However, it is tricky to evaluate the inherent stability of MoS2 transistors because it is highly dependent on environmental conditions during measurement such as humidity, light, and electrical factors. We studied the threshold voltage instability under negative bias stress at a variety of temperatures in a vacuum and in the dark to eliminate any environmental effects. In particular, the measurement of transfer curves under stress is minimized in order to study the inherent instability of MoS2 transistors, even though the measurement of transfer curves is normally indispensable to check for the evolution of electrical instability. MoS2 transistors have high average effective energy when compared to conventional amorphous Si and oxide semiconductor transistors, which allows for adequate operation at high temperatures. (
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U2 - 10.1002/pssr.201409146
DO - 10.1002/pssr.201409146
M3 - Article
AN - SCOPUS:84905916845
VL - 8
SP - 714
EP - 718
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 8
ER -