Electrical stability of multilayer MoS₂ field-effect transistor under negative bias stress at various temperatures

The electrical stability of molybdenum disulfide (MoS₂) transistors is crucial for their use in various applications. However, it is tricky to evaluate the inherent stability of MoS₂ transistors because it is highly dependent on environmental conditions during measurement such as humidity, light, and electrical factors. We studied the threshold voltage instability under negative bias stress at a variety of temperatures in a vacuum and in the dark to eliminate any environmental effects. In particular, the measurement of transfer curves under stress is minimized in order to study the inherent instability of MoS₂ transistors, even though the measurement of transfer curves is normally indispensable to check for the evolution of electrical instability. MoS₂ transistors have high average effective energy when compared to conventional amorphous Si and oxide semiconductor transistors, which allows for adequate operation at high temperatures. (