Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications

Seung Hun Lee, Kihwan Kwon, Kwanoh Kim, Jae Sung Yoon, Doo Sun Choi, Yeongeun Yoo, Chunjoong Kim, Shinill Kang, Jeong Hwan Kim

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The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

Original languageEnglish
Article number137
Issue number1
Publication statusPublished - 2019 Jan 3


All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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