Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications

Seung Hun Lee; Kihwan Kwon; Kwanoh Kim; Jae Sung Yoon; Doo Sun Choi; Yeongeun Yoo; Chunjoong Kim; Shinill Kang; Jeong Hwan Kim

doi:10.3390/ma12010137

Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications

Seung Hun Lee, Kihwan Kwon, Kwanoh Kim, Jae Sung Yoon, Doo Sun Choi, Yeongeun Yoo, Chunjoong Kim, Shinill Kang, Jeong Hwan Kim

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The properties of Al-doped SnO _x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO _x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec ^-1 , increased on/off current ratio of ~8 × 10 ⁷ , threshold voltage (V _th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO _x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

Original language	English
Article number	137
Journal	Materials
Volume	12
Issue number	1
DOIs	https://doi.org/10.3390/ma12010137
Publication status	Published - 2019 Jan 3

Bibliographical note

Funding Information:
Funding: The research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT for the First‐Mover Program for Accelerating Disruptive Technology Development (NRF‐2018M3C1B9069841). The work was also funded by Korea Institute of Machinery and Materials (NK211D).

Funding Information:
Funding: The research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT for the First-Mover Program for Accelerating Disruptive Technology Development (NRF-2018M3C1B9069841). The work was also funded by Korea Institute of Machinery and Materials (NK211D).

Publisher Copyright:
© 2019 by the authors.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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title = "Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications",

abstract = " The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.",

author = "Lee, {Seung Hun} and Kihwan Kwon and Kwanoh Kim and Yoon, {Jae Sung} and Choi, {Doo Sun} and Yeongeun Yoo and Chunjoong Kim and Shinill Kang and Kim, {Jeong Hwan}",

note = "Funding Information: Funding: The research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT for the First‐Mover Program for Accelerating Disruptive Technology Development (NRF‐2018M3C1B9069841). The work was also funded by Korea Institute of Machinery and Materials (NK211D). Funding Information: Funding: The research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT for the First-Mover Program for Accelerating Disruptive Technology Development (NRF-2018M3C1B9069841). The work was also funded by Korea Institute of Machinery and Materials (NK211D). Publisher Copyright: {\textcopyright} 2019 by the authors.",

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AU - Choi, Doo Sun

AU - Yoo, Yeongeun

AU - Kim, Chunjoong

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AU - Kim, Jeong Hwan

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PY - 2019/1/3

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N2 - The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

AB - The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

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Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications

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