Abstract
The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
| Original language | English |
|---|---|
| Article number | 137 |
| Journal | Materials |
| Volume | 12 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2019 Jan 3 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
Cite this
}
Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications. / Lee, Seung Hun; Kwon, Kihwan; Kim, Kwanoh; Yoon, Jae Sung; Choi, Doo Sun; Yoo, Yeongeun; Kim, Chunjoong; Kang, Shinill; Kim, Jeong Hwan.
In: Materials, Vol. 12, No. 1, 137, 03.01.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications
AU - Lee, Seung Hun
AU - Kwon, Kihwan
AU - Kim, Kwanoh
AU - Yoon, Jae Sung
AU - Choi, Doo Sun
AU - Yoo, Yeongeun
AU - Kim, Chunjoong
AU - Kang, Shinill
AU - Kim, Jeong Hwan
PY - 2019/1/3
Y1 - 2019/1/3
N2 - The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
AB - The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
UR - http://www.scopus.com/inward/record.url?scp=85059515949&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059515949&partnerID=8YFLogxK
U2 - 10.3390/ma12010137
DO - 10.3390/ma12010137
M3 - Article
AN - SCOPUS:85059515949
VL - 12
JO - Materials
JF - Materials
SN - 1996-1944
IS - 1
M1 - 137
ER -