Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications

Seung Hun Lee, Kihwan Kwon, Kwanoh Kim, Jae Sung Yoon, Doo Sun Choi, Yeongeun Yoo, Chunjoong Kim, Shinill Kang, Jeong Hwan Kim

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

Original languageEnglish
Article number137
JournalMaterials
Volume12
Issue number1
DOIs
Publication statusPublished - 2019 Jan 3

Bibliographical note

Funding Information:
Funding: The research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT for the First‐Mover Program for Accelerating Disruptive Technology Development (NRF‐2018M3C1B9069841). The work was also funded by Korea Institute of Machinery and Materials (NK211D).

Funding Information:
Funding: The research was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT for the First-Mover Program for Accelerating Disruptive Technology Development (NRF-2018M3C1B9069841). The work was also funded by Korea Institute of Machinery and Materials (NK211D).

Publisher Copyright:
© 2019 by the authors.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Fingerprint

Dive into the research topics of 'Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications'. Together they form a unique fingerprint.

Cite this