Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications

Seung Hun Lee, Kihwan Kwon, Kwanoh Kim, Jae Sung Yoon, Doo Sun Choi, Yeongeun Yoo, Chunjoong Kim, Shinill Kang, Jeong Hwan Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

Original languageEnglish
Article number137
JournalMaterials
Volume12
Issue number1
DOIs
Publication statusPublished - 2019 Jan 3

Fingerprint

Thin film transistors
Tin oxides
Aluminum
Oxide films
Adhesives
Thin films
Semiconductor materials
Flexible electronics
Fabrication
Opacity
Amorphous films
Oxygen vacancies
Threshold voltage
Sputtering
Plastics
Atoms
Defects
Substrates
Air
stannic oxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Lee, Seung Hun ; Kwon, Kihwan ; Kim, Kwanoh ; Yoon, Jae Sung ; Choi, Doo Sun ; Yoo, Yeongeun ; Kim, Chunjoong ; Kang, Shinill ; Kim, Jeong Hwan. / Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications. In: Materials. 2019 ; Vol. 12, No. 1.
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abstract = "The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom {\%}-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81{\%}) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97{\%}, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.",
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Electrical, structural, optical, and adhesive characteristics of aluminum-doped tin oxide thin films for transparent flexible thin-film transistor applications. / Lee, Seung Hun; Kwon, Kihwan; Kim, Kwanoh; Yoon, Jae Sung; Choi, Doo Sun; Yoo, Yeongeun; Kim, Chunjoong; Kang, Shinill; Kim, Jeong Hwan.

In: Materials, Vol. 12, No. 1, 137, 03.01.2019.

Research output: Contribution to journalArticle

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AU - Lee, Seung Hun

AU - Kwon, Kihwan

AU - Kim, Kwanoh

AU - Yoon, Jae Sung

AU - Choi, Doo Sun

AU - Yoo, Yeongeun

AU - Kim, Chunjoong

AU - Kang, Shinill

AU - Kim, Jeong Hwan

PY - 2019/1/3

Y1 - 2019/1/3

N2 - The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

AB - The properties of Al-doped SnO x films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO x thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec -1 , increased on/off current ratio of ~8 × 10 7 , threshold voltage (V th ) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnO x films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

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