Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Der Hsien Lien, Shiekh Zia Uddin, Matthew Yeh, Matin Amani, Hyungjin Kim, Joel W. Ager, Eli Yablonovitch, Ali Javey

Research output: Contribution to journalArticlepeer-review

143 Citations (Scopus)

Abstract

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density.We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

Original languageEnglish
Pages (from-to)468-471
Number of pages4
JournalScience
Volume364
Issue number6439
DOIs
Publication statusPublished - 2019

Bibliographical note

Funding Information:
Material preparation, optical characterizations, andmodeling were supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under contract DE-AC02-05CH11231 within the Electronic Materials Program (KC1201). Device fabrication was supported by the Center for Energy Efficient Electronics Science (NSF award 0939514).

Publisher Copyright:
© 2019 American Association for the Advancement of Science. All rights reserved.

All Science Journal Classification (ASJC) codes

  • General

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