Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Der Hsien Lien; Shiekh Zia Uddin; Matthew Yeh; Matin Amani; Hyungjin Kim; Joel W. Ager; Eli Yablonovitch; Ali Javey

doi:10.1126/science.aaw8053

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Der Hsien Lien, Shiekh Zia Uddin, Matthew Yeh, Matin Amani, Hyungjin Kim, Joel W. Ager, Eli Yablonovitch, Ali Javey

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

184 Citations (Scopus)

Abstract

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS₂, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density.We show that the PL QY of as-processed MoS₂ and WS₂ monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

Original language	English
Pages (from-to)	468-471
Number of pages	4
Journal	Science
Volume	364
Issue number	6439
DOIs	https://doi.org/10.1126/science.aaw8053
Publication status	Published - 2019

Bibliographical note

Funding Information:
Material preparation, optical characterizations, andmodeling were supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under contract DE-AC02-05CH11231 within the Electronic Materials Program (KC1201). Device fabrication was supported by the Center for Energy Efficient Electronics Science (NSF award 0939514).

Publisher Copyright:
© 2019 American Association for the Advancement of Science. All rights reserved.

All Science Journal Classification (ASJC) codes

General

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10.1126/science.aaw8053

Cite this

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title = "Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors",

abstract = "Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density.We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.",

author = "Lien, {Der Hsien} and Uddin, {Shiekh Zia} and Matthew Yeh and Matin Amani and Hyungjin Kim and Ager, {Joel W.} and Eli Yablonovitch and Ali Javey",

note = "Funding Information: Material preparation, optical characterizations, andmodeling were supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under contract DE-AC02-05CH11231 within the Electronic Materials Program (KC1201). Device fabrication was supported by the Center for Energy Efficient Electronics Science (NSF award 0939514). Publisher Copyright: {\textcopyright} 2019 American Association for the Advancement of Science. All rights reserved.",

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doi = "10.1126/science.aaw8053",

language = "English",

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AU - Lien, Der Hsien

AU - Uddin, Shiekh Zia

AU - Yeh, Matthew

AU - Amani, Matin

AU - Kim, Hyungjin

AU - Ager, Joel W.

AU - Yablonovitch, Eli

AU - Javey, Ali

N1 - Funding Information: Material preparation, optical characterizations, andmodeling were supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under contract DE-AC02-05CH11231 within the Electronic Materials Program (KC1201). Device fabrication was supported by the Center for Energy Efficient Electronics Science (NSF award 0939514). Publisher Copyright: © 2019 American Association for the Advancement of Science. All rights reserved.

PY - 2019

Y1 - 2019

N2 - Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density.We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

AB - Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density.We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

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Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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