Electrical switching characteristics of nitrogen doped Ge 2Sb2Te5 based Phase Change Random Access Memory Cell

Myoungsub Kim, Jinhyung Jun, Jinho Oh, Hyeongjoon Kim, Jaesung Roh, Sukkyoung Hong, Doojin Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Ge2Sb2Te5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80-1.00 μm). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (RRESET to RSET) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd
Number of pages4
EditionPART 1
ISBN (Print)3908451310, 9783908451310
Publication statusPublished - 2007
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 2006 Sep 102006 Sep 14

Publication series

NameSolid State Phenomena
NumberPART 1
ISSN (Print)1012-0394


OtherIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/TerritoryKorea, Republic of

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics


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