Electrical switching characteristics of nitrogen doped Ge 2 Sb 2 Te 5 based Phase Change Random Access Memory Cell

Myoungsub Kim, Jinhyung Jun, Jinho Oh, Hyeongjoon Kim, Jaesung Roh, Sukkyoung Hong, Doo Jin Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Ge 2 Sb 2 Te 5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80-1.00 μm). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (R RESET to R SET ) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd
Pages21-24
Number of pages4
EditionPART 1
ISBN (Print)3908451310, 9783908451310
Publication statusPublished - 2007 Jan 1
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 2006 Sep 102006 Sep 14

Publication series

NameSolid State Phenomena
NumberPART 1
Volume124-126
ISSN (Print)1012-0394

Other

OtherIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
CountryKorea, Republic of
CityJeju
Period06/9/1006/9/14

Fingerprint

random access memory
Nitrogen
Data storage equipment
nitrogen
Electrodes
electrodes
cells
Doping (additives)
phase change materials
Phase change materials
low voltage
Crystalline materials
Electric potential

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kim, M., Jun, J., Oh, J., Kim, H., Roh, J., Hong, S., & Choi, D. J. (2007). Electrical switching characteristics of nitrogen doped Ge 2 Sb 2 Te 5 based Phase Change Random Access Memory Cell In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 1 ed., pp. 21-24). (Solid State Phenomena; Vol. 124-126, No. PART 1). Trans Tech Publications Ltd.
Kim, Myoungsub ; Jun, Jinhyung ; Oh, Jinho ; Kim, Hyeongjoon ; Roh, Jaesung ; Hong, Sukkyoung ; Choi, Doo Jin. / Electrical switching characteristics of nitrogen doped Ge 2 Sb 2 Te 5 based Phase Change Random Access Memory Cell Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. pp. 21-24 (Solid State Phenomena; PART 1).
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abstract = "Ge 2 Sb 2 Te 5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80-1.00 μm). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (R RESET to R SET ) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.",
author = "Myoungsub Kim and Jinhyung Jun and Jinho Oh and Hyeongjoon Kim and Jaesung Roh and Sukkyoung Hong and Choi, {Doo Jin}",
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Kim, M, Jun, J, Oh, J, Kim, H, Roh, J, Hong, S & Choi, DJ 2007, Electrical switching characteristics of nitrogen doped Ge 2 Sb 2 Te 5 based Phase Change Random Access Memory Cell in Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 edn, Solid State Phenomena, no. PART 1, vol. 124-126, Trans Tech Publications Ltd, pp. 21-24, IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, Jeju, Korea, Republic of, 06/9/10.

Electrical switching characteristics of nitrogen doped Ge 2 Sb 2 Te 5 based Phase Change Random Access Memory Cell . / Kim, Myoungsub; Jun, Jinhyung; Oh, Jinho; Kim, Hyeongjoon; Roh, Jaesung; Hong, Sukkyoung; Choi, Doo Jin.

Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. p. 21-24 (Solid State Phenomena; Vol. 124-126, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Electrical switching characteristics of nitrogen doped Ge 2 Sb 2 Te 5 based Phase Change Random Access Memory Cell

AU - Kim, Myoungsub

AU - Jun, Jinhyung

AU - Oh, Jinho

AU - Kim, Hyeongjoon

AU - Roh, Jaesung

AU - Hong, Sukkyoung

AU - Choi, Doo Jin

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Ge 2 Sb 2 Te 5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80-1.00 μm). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (R RESET to R SET ) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.

AB - Ge 2 Sb 2 Te 5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80-1.00 μm). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (R RESET to R SET ) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.

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M3 - Conference contribution

SN - 3908451310

SN - 9783908451310

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BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia

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Kim M, Jun J, Oh J, Kim H, Roh J, Hong S et al. Electrical switching characteristics of nitrogen doped Ge 2 Sb 2 Te 5 based Phase Change Random Access Memory Cell In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 ed. Trans Tech Publications Ltd. 2007. p. 21-24. (Solid State Phenomena; PART 1).